The Comparison of T/RX Switch Performance for UWB Communication

Seungsik Lee, B. Park, Seunghyun Jang, Sangsung Choi
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Abstract

This paper compares performance of three transmitter/receiver (T/RX) switch structures, which can be included as UWB RF transceiver. They are designed using complementary metal-oxide semiconductor (CMOS) 0.13 um technology and simulated each structure. They can be operated from 3 to 5 GHz and package model are applied for chip on board(COB) test. They have 1.8 dB insertion loss and more than 30 dB isolation at 5 GHz.
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UWB通信中T/RX开关性能的比较
本文比较了三种可作为UWB射频收发器的收发开关结构的性能。它们采用互补金属氧化物半导体(CMOS) 0.13 um技术设计,并模拟了每种结构。它们可以在3至5 GHz范围内工作,并且封装模型适用于板上芯片(COB)测试。它们的插入损耗为1.8 dB,在5 GHz时的隔离度超过30 dB。
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