AlGaN/GaN HEMT Large Signal Nonlinear Compact Model Accounting for Thermal Effects and Trapping Dispersion

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659214

Yueying Liu, E. Reese

引用次数: 3

Abstract

A customized nonlinear compact model is applied to AlGaN/GaN HEMT devices for Power Amplifier applications. The model formulation is created to represent behavior specific to GaN HEMT devices. The model incorporates novel formulations for Ids equations, bias dependency of access resistances, charge storage, and dispersion models, tailored to GaN HEMT device behavior. The model has been used to generate nonlinear common-source models in frequency ranges of S-, Ku- and Ka-band processes. A typical 4x50um S-band and Ku-band device will be used to demonstrate the extraction and validation of the model, in which the model has predicted the DCIV, CW S Parameters, and LP results accurately.

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考虑热效应和捕获色散的AlGaN/GaN HEMT大信号非线性紧凑模型

一个定制的非线性紧凑模型应用于功率放大器应用的AlGaN/GaN HEMT器件。创建模型公式是为了表示GaN HEMT器件的特定行为。该模型结合了Ids方程的新公式，接入电阻的偏置依赖性，电荷存储和色散模型，适合GaN HEMT器件的行为。该模型已用于生成S、Ku和ka波段过程的非线性共源模型。将使用典型的4x50um S波段和ku波段设备演示模型的提取和验证，其中模型准确预测了DCIV, CW S参数和LP结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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Linearity Improvement of GaN HEMT for RF Power Amplifiers An LC VCO for High Power Millimeter-Wave Signal Generation AlGaN/GaN HEMT Large Signal Nonlinear Compact Model Accounting for Thermal Effects and Trapping Dispersion A 1.4 GHz MMIC Active Cold Noise Source Analog Linearization Techniques Suitable for RF Power Amplifiers Used in Integrated Transmitters