A general theory for predicting subthreshold transmembrane response to electric and magnetic fields

S. Nagarajan, D. Durand
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引用次数: 3

Abstract

The authors present a general theory for predicting transmembrane response along uniform finite length axons with arbitrary geometries and finite terminating impedances due to applied electric and magnetic fields. The transmembrane potential due to subthreshold applied electric and magnetic fields can be described using a generalized cable equation. The authors derive an integral expression for the subthreshold transmembrane potential by choosing a Green's function appropriate to the boundary conditions and configuration of the neuronal structure. Numerical evaluation of this integral expression can then be used to predict transmembrane response during electric and magnetic stimulation. The authors illustrate the usefulness of the theory with specific examples of stimulation of finite axons with arbitrary geometries, by electric and magnetic fields.<>
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预测阈下跨膜对电场和磁场响应的一般理论
作者提出了一种预测在外加电场和磁场作用下沿任意几何形状和有限终端阻抗的均匀有限长轴突跨膜响应的一般理论。由亚阈值外加电场和磁场引起的跨膜电位可以用广义的电缆方程来描述。作者通过选择与神经元结构的边界条件和配置相适应的格林函数,推导出阈下跨膜电位的积分表达式。这个积分表达式的数值计算可以用来预测电和磁刺激下的跨膜反应。作者用电场和磁场对任意几何形状的有限轴突的刺激的具体例子来说明这一理论的实用性。
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