{"title":"Thick-Gate-Oxide MOS Structures with Sub-Design-Rule (SDR) Polysilicon Lengths for RF Circuit Applications","authors":"H. Xu, K. O","doi":"10.1109/SMIC.2008.53","DOIUrl":null,"url":null,"abstract":"Use of sub-design-rule (SDR) thick-gate-oxide MOS structures can significantly improve RF performance. Utilizing 3-stack 3.3-V MOSFET's with an SDR channel length, a 31.3-dBm 900-MHz Bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB is realized. A 28-dBm 2.4-GHz T/R switch with TX and RX insertion losses of 0.8 and 1.2 dB is also demonstrated. SDR MOS varactors achieve Qmin of ~ 80 at 24 GHz with a tuning range of ~ 40%.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2008.53","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Use of sub-design-rule (SDR) thick-gate-oxide MOS structures can significantly improve RF performance. Utilizing 3-stack 3.3-V MOSFET's with an SDR channel length, a 31.3-dBm 900-MHz Bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB is realized. A 28-dBm 2.4-GHz T/R switch with TX and RX insertion losses of 0.8 and 1.2 dB is also demonstrated. SDR MOS varactors achieve Qmin of ~ 80 at 24 GHz with a tuning range of ~ 40%.
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