Beyond Y2K: technology convergence as a driver of future low-voltage power management semiconductors

R.K. Williams
{"title":"Beyond Y2K: technology convergence as a driver of future low-voltage power management semiconductors","authors":"R.K. Williams","doi":"10.1109/ISPSD.2000.856764","DOIUrl":null,"url":null,"abstract":"Convergence of computing consumer, and communication products into multifunction portables (e.g. Internet cell phones) is driving today's electronics toward a unified chip set concept sharing common power architectures. These converging specifications allow analog and power management ICs and discretes to migrate into older mid-to-deep submicron DRAM fabs, enjoying significant chip shrinks, speed increases, switch resistance reduction, higher functionality and lower manufacturing costs. Low thermal budget processes, CMP, 3D structures, ultra-shallow junctions and planarized interconnects are promising and beneficial byproducts of this evolution. The world's first production 45 Mcell/cm/sup 2/ (287 Mcell/in/sup 2/) vertical 30 V power TrenchDMOS is illustrative of technology convergence in power management semiconductors.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856764","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

Convergence of computing consumer, and communication products into multifunction portables (e.g. Internet cell phones) is driving today's electronics toward a unified chip set concept sharing common power architectures. These converging specifications allow analog and power management ICs and discretes to migrate into older mid-to-deep submicron DRAM fabs, enjoying significant chip shrinks, speed increases, switch resistance reduction, higher functionality and lower manufacturing costs. Low thermal budget processes, CMP, 3D structures, ultra-shallow junctions and planarized interconnects are promising and beneficial byproducts of this evolution. The world's first production 45 Mcell/cm/sup 2/ (287 Mcell/in/sup 2/) vertical 30 V power TrenchDMOS is illustrative of technology convergence in power management semiconductors.
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超越千年虫:技术融合作为未来低压电源管理半导体的驱动因素
计算消费和通信产品向多功能便携设备(如互联网移动电话)的融合正在推动今天的电子产品向共享通用电源架构的统一芯片组概念发展。这些融合的规格允许模拟和电源管理ic和分立器件迁移到旧的中深亚微米DRAM晶圆厂,享受显着的芯片缩小,速度提高,开关电阻降低,更高的功能和更低的制造成本。低热预算工艺、CMP、3D结构、超浅结和平面互连是这种发展的有益副产品。世界上第一个生产45 Mcell/cm/sup 2/ (287 Mcell/in/sup 2/)垂直30 V功率的TrenchDMOS是电源管理半导体技术融合的例证。
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