SPICE Model of SiGe HBT with High Resistivity Substrate and its Amplifier Design

Yang Wei-ming, Chen Jian-xin, Shi Chen, Liu Su-juan
{"title":"SPICE Model of SiGe HBT with High Resistivity Substrate and its Amplifier Design","authors":"Yang Wei-ming, Chen Jian-xin, Shi Chen, Liu Su-juan","doi":"10.1109/ICMMT.2007.381427","DOIUrl":null,"url":null,"abstract":"The SPICE model parameters of SiGe HBT with high resistivity substrate is extracted. Compared results between measured and simulated data verify that this model is suitable for SiGe HBT DC and AC small-signal characterizations' representation. Using these extracted SPICE parameters, a two-stage direct-coupled amplifier has been designed and implemented on a Teflon substrate PCB. The simulated results are closed to that of test.","PeriodicalId":409971,"journal":{"name":"2007 International Conference on Microwave and Millimeter Wave Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2007-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Conference on Microwave and Millimeter Wave Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2007.381427","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The SPICE model parameters of SiGe HBT with high resistivity substrate is extracted. Compared results between measured and simulated data verify that this model is suitable for SiGe HBT DC and AC small-signal characterizations' representation. Using these extracted SPICE parameters, a two-stage direct-coupled amplifier has been designed and implemented on a Teflon substrate PCB. The simulated results are closed to that of test.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
高阻衬底SiGe HBT的SPICE模型及其放大器设计
提取了高电阻率衬底SiGe HBT的SPICE模型参数。实测数据和仿真数据的对比结果验证了该模型适用于SiGe HBT直流和交流小信号表征。利用这些提取的SPICE参数,在聚四氟乙烯衬底PCB上设计并实现了一个两级直接耦合放大器。模拟结果与试验结果接近。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
PO-MOM Analysis of the Radiation Characteristics of a Yagi-Uda Antenna Enclosed in a Large Kaman Radome A Design of 4-bit "Distributed drive" MEMS Phase Shifters Differential Interferometric Calibration for InSAR System Microwave analog and simulation in open quantum dots Phase Noise Analysis of Phase-Locking Techniques for Nonlinear Active Antenna Arrays
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1