{"title":"Asymmetric Junctionless Transistor","authors":"Gaurav Saini, T. Sasamal","doi":"10.1201/9781003121589-9","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":331396,"journal":{"name":"High-k Materials in Multi-Gate FET Devices","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"High-k Materials in Multi-Gate FET Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1201/9781003121589-9","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
