{"title":"GaAs/GaAlAs Heterojunction Bipolar Phototransistor for Monolithic Photoreceiver Operating at 140 Mbit/s","authors":"H. Wang, C. Bacot, C. Chevalier, D. Ankri","doi":"10.1109/MWSYM.1986.1132290","DOIUrl":null,"url":null,"abstract":"The first monolithic integrated photodetector-preamplifier implemented with GaAs-GaAIAs heterojunction phototransistor and transistors has been fabricated and tested. A heterojunction phototransistor (HPT), two heterojunction bipolar transistors (HBT's) and four resistors are integrated in a 0.5 x 0.5 mm/sup 2/ GaAs chip. The photoreceiver with a 26 kOmega external feedback resistor has a bandwidth of 80 MHz with a transimpedance gain of 7000V/A. The noise measurements indicate that a minimum detectable power of -30 dBm is obtained at 140 Mbit/s for an error rate of 10/sup -9/.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1986.1132290","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The first monolithic integrated photodetector-preamplifier implemented with GaAs-GaAIAs heterojunction phototransistor and transistors has been fabricated and tested. A heterojunction phototransistor (HPT), two heterojunction bipolar transistors (HBT's) and four resistors are integrated in a 0.5 x 0.5 mm/sup 2/ GaAs chip. The photoreceiver with a 26 kOmega external feedback resistor has a bandwidth of 80 MHz with a transimpedance gain of 7000V/A. The noise measurements indicate that a minimum detectable power of -30 dBm is obtained at 140 Mbit/s for an error rate of 10/sup -9/.
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