{"title":"Switching Performance of mm-Wave PIN Diodes for Ultra High Data Rates","authors":"F. Bosch, O. Petersen","doi":"10.1109/MWSYM.1977.1124408","DOIUrl":null,"url":null,"abstract":"The 300 Mb/s switching performance of 40 to 110 GHz PIN diodes is presented as a function of their storage and fall time, which varied from 2 to 18 and 0.2 to 1.2 ns, respectively.","PeriodicalId":299607,"journal":{"name":"1977 IEEE MTT-S International Microwave Symposium Digest","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1977.1124408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
The 300 Mb/s switching performance of 40 to 110 GHz PIN diodes is presented as a function of their storage and fall time, which varied from 2 to 18 and 0.2 to 1.2 ns, respectively.
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