{"title":"Novel Techniques of FIB Edit on VDD Routing in Internal Circuit for IDDQ Leakage Failure Analysis","authors":"Akeel Nazakat, Li Yungui, Renee Liu, Vincent Chew","doi":"10.1109/IPFA.2018.8452512","DOIUrl":null,"url":null,"abstract":"Static curve trace is an essential test method to discover parametric damage on a signal without adding stimulus to an electronic component, it is relatively quick process, and resembling to a detailed continuity test. Yet, its drawback comes when pad signal that we measured, especially VDD power line, routed only at specific or outer pad circuitries, leaving various internal untested circuits within the integrated circuit. This consequence in actual defect site cannot be detected in certain areas. A novel approach to combine layout circuitry study and focus ion beam (FIB) edit are used to create additional power (VDD) to this untested internal circuits to have an extensive characterization of failure mode coupled with fault localization techniques. This paper demonstrates the effectiveness of this method with low IDDQ leakage failure analysis.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"264 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452512","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Static curve trace is an essential test method to discover parametric damage on a signal without adding stimulus to an electronic component, it is relatively quick process, and resembling to a detailed continuity test. Yet, its drawback comes when pad signal that we measured, especially VDD power line, routed only at specific or outer pad circuitries, leaving various internal untested circuits within the integrated circuit. This consequence in actual defect site cannot be detected in certain areas. A novel approach to combine layout circuitry study and focus ion beam (FIB) edit are used to create additional power (VDD) to this untested internal circuits to have an extensive characterization of failure mode coupled with fault localization techniques. This paper demonstrates the effectiveness of this method with low IDDQ leakage failure analysis.