{"title":"Theoretical approach to the stoichiometric feature of field emission from Al/sub x/Ga/sub 1-x/N","authors":"T. S. Choi, M. Chung","doi":"10.1109/IVESC.2004.1414225","DOIUrl":null,"url":null,"abstract":"The field emission current density j from the ternary alloy Al/sub x/Ga/sub 1-x/N is calculated as a function of a stoichiometric composition x for 0/spl les/x/spl les/1. In addition to the doping, the internal field emission is considered to contribute to the carrier concentration n of the conduction band of Al/sub x/Ga/sub 1-x/N. A full calculation is made to obtain the exact j from Al/sub x/Ga/sub 1-x/N as a function of x and the field F. Then we found the stoichiometric dependence of field emission from Al/sub x/Ga/sub 1-x/N by analyzing the effects of both the electron affinity and the carrier concentration.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVESC.2004.1414225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The field emission current density j from the ternary alloy Al/sub x/Ga/sub 1-x/N is calculated as a function of a stoichiometric composition x for 0/spl les/x/spl les/1. In addition to the doping, the internal field emission is considered to contribute to the carrier concentration n of the conduction band of Al/sub x/Ga/sub 1-x/N. A full calculation is made to obtain the exact j from Al/sub x/Ga/sub 1-x/N as a function of x and the field F. Then we found the stoichiometric dependence of field emission from Al/sub x/Ga/sub 1-x/N by analyzing the effects of both the electron affinity and the carrier concentration.
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