{"title":"New HTDR Phenomenon Study for 2Xnm NAND Flash Cycling Interval Time Effect","authors":"Huang Chia-Sheng, R. Ogino","doi":"10.1109/IPFA.2018.8452599","DOIUrl":null,"url":null,"abstract":"In this paper, we explored the 2Xnm NAND Flash relationship between HTDR (High temperature data retention) and Pre-cycling conditions in detail. The Pre-cycling interval time effect, no matter in 4Xnm or 2Xnm NAND Flash is play different roles. Finally, based on experimental data we also explored related analyses and discussions of the physical mechanisms.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we explored the 2Xnm NAND Flash relationship between HTDR (High temperature data retention) and Pre-cycling conditions in detail. The Pre-cycling interval time effect, no matter in 4Xnm or 2Xnm NAND Flash is play different roles. Finally, based on experimental data we also explored related analyses and discussions of the physical mechanisms.
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