{"title":"Analysis of the impacts of the VGSth in modern SMPS","authors":"Domenico Nardo, Alfio Scuto, M. Cacciato","doi":"10.1109/ELEKTRO49696.2020.9130265","DOIUrl":null,"url":null,"abstract":"Addressing modern SMPS applications, the impact of gate-source threshold voltage (VGSth) in super junction MOSFET is investigated, using a DCM PFC and a half bridge LLC as test vehicles. Specifically, a higher VGSth, while effecting the performance, introduces benefits and disadvantages as well.","PeriodicalId":165069,"journal":{"name":"2020 ELEKTRO","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 ELEKTRO","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELEKTRO49696.2020.9130265","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Addressing modern SMPS applications, the impact of gate-source threshold voltage (VGSth) in super junction MOSFET is investigated, using a DCM PFC and a half bridge LLC as test vehicles. Specifically, a higher VGSth, while effecting the performance, introduces benefits and disadvantages as well.
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