{"title":"Electron emission properties of planar-type electron emission sources based on nanocrystalline silicon","authors":"H. Shimawaki, K. Murakami, M. Nagao, H. Mimura","doi":"10.1109/IVNC49440.2020.9203289","DOIUrl":null,"url":null,"abstract":"Electron emission properties of planar-type electron emission sources based on oxidized nanocrystalline silicon with graphene-gate electrode were investigated. The emission current was improved by an order of magnitude by vacuum annealing.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC49440.2020.9203289","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Electron emission properties of planar-type electron emission sources based on oxidized nanocrystalline silicon with graphene-gate electrode were investigated. The emission current was improved by an order of magnitude by vacuum annealing.
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