Scott G. Criswell, T. Morgan, G. Forcherio, S. Koutsares, D. Kozak, J. Caldwell, J. Valentine
{"title":"Engineering three-dimensional Schottky interfaces towards efficient extraction of plasmonic hot electrons","authors":"Scott G. Criswell, T. Morgan, G. Forcherio, S. Koutsares, D. Kozak, J. Caldwell, J. Valentine","doi":"10.1117/12.2594262","DOIUrl":null,"url":null,"abstract":"Photodetectors harnessing hot carrier generation on surface plasmon resonant nanoantennas are a promising avenue to achieving sub-bandgap imaging at room temperature. However, efficient extraction of plasmonic hot carriers under low-energy infrared (IR) excitation predicates careful design of Schottky interfaces. This work reports on the simulation-guided fabrication of Au (i) planar diodes and (ii) embedded IR nanoantennas interfaced with both n-/p-type Si and GaAs semiconductors in order to elucidate the impact of their electronic properties on photocurrent generation.","PeriodicalId":130368,"journal":{"name":"Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVIII","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVIII","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2594262","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Photodetectors harnessing hot carrier generation on surface plasmon resonant nanoantennas are a promising avenue to achieving sub-bandgap imaging at room temperature. However, efficient extraction of plasmonic hot carriers under low-energy infrared (IR) excitation predicates careful design of Schottky interfaces. This work reports on the simulation-guided fabrication of Au (i) planar diodes and (ii) embedded IR nanoantennas interfaced with both n-/p-type Si and GaAs semiconductors in order to elucidate the impact of their electronic properties on photocurrent generation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
