CMOS Integrated FET-based Detectors for Radiation from 0.7-3.6THz

Min Liu, Liyuan Liu, Jian Liu, Nan-Jian Wu
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引用次数: 1

Abstract

This paper reports on integrated FET-based terahertz detectors operating in discrete frequencies spanning from 0.7-3.6THz. They are fabricated in standard 180nm CMOS process technology, and occupies a 2.7×3.0 mm2 chip area. Based on the Dyakonov and Shur theory, multi-pixel detectors are implemented by strict performance optimization and process compatibility. The simulated results demonstrate a promising application in low-cost terahertz spectrometer and imaging fields.
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用于0.7-3.6THz辐射的CMOS集成fet探测器
本文报道了基于fet的集成太赫兹探测器,工作在0.7-3.6太赫兹的离散频率范围内。它们采用标准的180nm CMOS工艺技术制造,芯片面积为2.7×3.0 mm2。基于Dyakonov和Shur理论,通过严格的性能优化和工艺兼容性实现了多像素检测器。仿真结果表明,该方法在低成本太赫兹光谱仪和成像领域具有广阔的应用前景。
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