{"title":"Degradation and recovery of high-speed SiGe HBTs under very high reverse EB stress conditions","authors":"G. Sasso, N. Rinaldi, G. Fischer, B. Heinemann","doi":"10.1109/BCTM.2014.6981282","DOIUrl":null,"url":null,"abstract":"Hot-carrier induced degradation and post-stress recovery of 240/300 fT/fMAX SiGe HBTs are investigated. The investigation includes the impact of stress conditions and lateral scaling. Self-heating is employed as a means to investigate thermal-induced recovery activation and rate.","PeriodicalId":423269,"journal":{"name":"2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2014.6981282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Hot-carrier induced degradation and post-stress recovery of 240/300 fT/fMAX SiGe HBTs are investigated. The investigation includes the impact of stress conditions and lateral scaling. Self-heating is employed as a means to investigate thermal-induced recovery activation and rate.
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