A study on damage progression in MEMS based Silicon oscillators subjected to high-g harsh environments

P. Lall, A. Abrol, Lee Simpson, J. Glover
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引用次数: 4

Abstract

Traditional Quartz based oscillators still outnumber their MEMS counterparts in the industry therefore no extensive prior studies exist which provide harsh environment reliability data for Silicon oscillators. MEMS based oscillators serve as clocks which control the timing in electronics, a better clock signal ensures higher performance, more consistent behavior and reliable operation. Harsh environment applications such as under the hood automotive, military, space navigation all make use of MEMS oscillators. None of the previous studies look into the impact of sequential harsh environment operating conditions. Survivability of MEMS oscillators at high relative humidity and high G environments is unknown. The effects of these pre-conditions along with the drop test conditions have been studied and analyzed. Anomalies in the oscillator behavior due to the presence of harsh environments lead to mismatch in the electronic timing of the circuit resulting in a bad consumer product, thus the importance of reliability data. In this paper a test vehicle with a MEMS oscillator, SiT 8103, has been tested under: high relative temperature humidity exposure and then followed by subjection to high-g shock loading environments. The test boards have been subjected to mechanical shocks using the method 2002.5, condition G, under the standard MIL-STD-883H test. The effect of temperature, humidity and shock on the oscillator has been studied. The survivability of SiT 8103 has been demonstrated as a function of change in the output frequency, rise/fall time(s) and duty cycle. Later the deterioration in oscillator output parameters has been characterized using the techniques of Fast Fourier Transform and Principal Component Analysis. The results obtained show that exposure to sequential high relative temperature-humidity and high-g shock affects the working of Silicon MEMS oscillators more than just the high-g shock environment. Rise and fall times, Output frequency and Duty cycle show more deterioration and drift in the 85°C/85%RH cases on comparison with their pristine counterparts. The energy spectrum data obtained after conducting the FFT analysis demonstrate that 85°C/85%RH samples have lower peak amplitudes/signal energy than the pristine samples especially during the first 50 drops.
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基于MEMS的硅振荡器在高g恶劣环境下的损伤进展研究
传统的石英振荡器在工业上仍然超过其MEMS同行,因此没有广泛的先前研究存在,为硅振荡器提供恶劣环境的可靠性数据。基于MEMS的振荡器作为控制电子器件时序的时钟,更好的时钟信号可确保更高的性能,更一致的行为和可靠的操作。恶劣的环境应用,如引擎盖下的汽车,军事,空间导航都使用MEMS振荡器。以前的研究都没有考虑到连续恶劣环境操作条件的影响。MEMS振荡器在高相对湿度和高重力环境下的生存能力尚不清楚。对这些前提条件以及跌落试验条件的影响进行了研究和分析。由于恶劣环境的存在,振荡器的异常行为会导致电路的电子时序失配,从而导致不良的消费产品,因此可靠性数据的重要性。在本文中,测试车辆与MEMS振荡器,SiT 8103,测试了:高相对温度和湿度暴露,然后受到高冲击负载环境。测试板在MIL-STD-883H标准测试下,采用2002.5方法,条件G进行机械冲击。研究了温度、湿度和冲击对振荡器的影响。SiT 8103的生存性已被证明是输出频率、上升/下降时间(s)和占空比变化的函数。随后,利用快速傅里叶变换和主成分分析技术对振荡器输出参数的退化进行了表征。结果表明,连续的高相对温度-湿度和高g冲击环境对硅MEMS振荡器的工作影响大于高g冲击环境。在85°C/85%RH的情况下,与原始情况相比,上升和下降时间、输出频率和占空比显示出更多的劣化和漂移。进行FFT分析后获得的能谱数据表明,85°C/85%RH样品的峰值幅值/信号能量低于原始样品,特别是在前50滴期间。
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