A High-Performance Hybrid Full Adder Circuit

Md. Shahbaz Hussain, Jyoti Kandpal, M. Hasan, Mohd Muqeem
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Abstract

This research presents a novel hybrid complementary metal oxide semiconductor (CMOS) design for a 1-bit complete adder. The investigation of the hybrid-CMOS design style was prompted by the search for good drivability, low-energy, and noise-robustness operation for deep submicron. Various CMOS logic style circuits are used in hybrid-CMOS design style to design a novel design of full adders with desired performance. This dramatically reduces design efforts by giving designers more freedom to focus on various applications. This work implements a novel full adder design using the FinFET 16 nm technology. At first, an XOR-XNOR circuit is presented that concurrently generates the XOR-XNOR full swing outputs, which is used to implement the full adder. The proposed design reports 23.64% to 74.95% and 13.47% to 81.31 % improvement in power delay product (PDP) and energy-delay product (EDP), respectively, over existing adders.
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一种高性能混合全加法器电路
本研究提出一种新的混合互补金属氧化物半导体(CMOS)设计,用于1位完全加法器。对混合cmos设计风格的研究是为了寻求在深亚微米下良好的驾驶性、低能量和噪声稳健性。在混合CMOS设计风格中采用各种CMOS逻辑电路,设计出具有理想性能的新型全加法器。这极大地减少了设计工作量,让设计师更自由地专注于各种应用程序。本工作采用16纳米FinFET技术实现了一种新颖的全加法器设计。首先,设计了一个异或异或电路,并发产生异或异或全摆幅输出,用于实现全加法器。与现有加法器相比,所提出的设计在功率延迟积(PDP)和能量延迟积(EDP)方面分别提高了23.64%至74.95%和13.47%至81.31%。
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