M. Uren, D. Hayes, R. Balmer, D. Wallis, K. Hilton, J. O. Maclean, T. Martin, C. Roff, P. McGovern, J. Benedikt, P. Tasker
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引用次数: 34
Abstract
GaN/AlGaN HEMTs can suffer from short channel effects as a result of insufficient buffer doping. The paper show that controlled iron doping of the GaN buffer during MOVPE growth can suppress all short-channel effects in 0.25mum gate length devices. The authors show that optimised iron doping has no effect on the RF output power or on the knee walkout (current-slump), but significantly improves the power added efficiency
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