Pub Date : 2006-10-10DOI: 10.1109/EMICC.2006.282775
A. Coustou, D. Dubuc, K. Grenier, E. Fourn, O. Llopis, R. Plana
This paper report on the investigation of a MEMS based voltage controlled oscillator (VCO) at 10 GHz. The authors report that the MEMS IC concept turns out to a 8 dB phase noise improvement and 4 dB output power improvement at 10 GHz, compared to the MMIC technology using P+/Nwell varactors. Measurements have shown an improvement of resonator's quality factor of MEMS technology compared to MMIC technology. It is proposed a new design that takes into account these behaviors. The new MEMS based VCO is under construction and it should feature -87dBc/Hz @ 10 GHz offset with 4 dBm output power
{"title":"Capabilities of a 10 GHz MEMS based VCO","authors":"A. Coustou, D. Dubuc, K. Grenier, E. Fourn, O. Llopis, R. Plana","doi":"10.1109/EMICC.2006.282775","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282775","url":null,"abstract":"This paper report on the investigation of a MEMS based voltage controlled oscillator (VCO) at 10 GHz. The authors report that the MEMS IC concept turns out to a 8 dB phase noise improvement and 4 dB output power improvement at 10 GHz, compared to the MMIC technology using P+/Nwell varactors. Measurements have shown an improvement of resonator's quality factor of MEMS technology compared to MMIC technology. It is proposed a new design that takes into account these behaviors. The new MEMS based VCO is under construction and it should feature -87dBc/Hz @ 10 GHz offset with 4 dBm output power","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125910444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282737
Kai Kang, Le-Wei Li, S. Zouhdi, Jinglin Shi, W. Yin
Electromagnetic and thermal analysis for conventional and differential spiral inductors on lossy silicon substrate is rigorously carried out in this paper. Accurate analytical expressions for calculating the frequency- and temperature-dependent inductances and substrate losses due to eddy currents are presented. The simulation results agree well with the measured data. These closed-form expressions offer the great insights into lossy substrate effects as a function of both the frequency and temperature on the performance of on-chip spiral inductors
{"title":"Electromagnetic-Thermal Analysis for Inductances and Eddy Current Losses of On-chip Spiral Inductors on Lossy Silicon Substrate","authors":"Kai Kang, Le-Wei Li, S. Zouhdi, Jinglin Shi, W. Yin","doi":"10.1109/EMICC.2006.282737","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282737","url":null,"abstract":"Electromagnetic and thermal analysis for conventional and differential spiral inductors on lossy silicon substrate is rigorously carried out in this paper. Accurate analytical expressions for calculating the frequency- and temperature-dependent inductances and substrate losses due to eddy currents are presented. The simulation results agree well with the measured data. These closed-form expressions offer the great insights into lossy substrate effects as a function of both the frequency and temperature on the performance of on-chip spiral inductors","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117218033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282798
C. Costrini, A. Bettidi, M. Calori, A. Cetronio, M. Feudale, C. Lanzieri, C. Proietti
The development of a compact S/C-band PHEMT MMIC power amplifier is reported. The MMIC is a single-biased two-stages HPA with a 15 mm gate-width output transistor. In the 3.5-4.0 GHz frequency bandwidth, CW output power is 39.0 plusmn 0.25 dBm, associated gain is 16.5 plusmn 0.25 and PAE ranges from 30 to 35 %; in pulsed operation mode (10% duty cycle), for the 3.5-4.3 GHz frequency bandwidth the output power is 39.5 plusmn 0.2 dBm and the associated gain is 19.5 plusmn 0.2 dB
{"title":"A Compact 8W S/C-Band MMIC Power Amplifier Designed for CW Telemetry Applications","authors":"C. Costrini, A. Bettidi, M. Calori, A. Cetronio, M. Feudale, C. Lanzieri, C. Proietti","doi":"10.1109/EMICC.2006.282798","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282798","url":null,"abstract":"The development of a compact S/C-band PHEMT MMIC power amplifier is reported. The MMIC is a single-biased two-stages HPA with a 15 mm gate-width output transistor. In the 3.5-4.0 GHz frequency bandwidth, CW output power is 39.0 plusmn 0.25 dBm, associated gain is 16.5 plusmn 0.25 and PAE ranges from 30 to 35 %; in pulsed operation mode (10% duty cycle), for the 3.5-4.3 GHz frequency bandwidth the output power is 39.5 plusmn 0.2 dBm and the associated gain is 19.5 plusmn 0.2 dB","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117341212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282676
JuHwan Lim, Sungwoo Hwang
Microwave resonances in a wirebond transition between conductor-backed coplanar waveguides (CBCPWs) on two different substrates (alumina and silicon) are investigated by using on-wafer measurements and three-dimensional (3D) electromagnetic (EM) simulations in the frequency range from 1 to 26.5 GHz. The simulated resonant frequencies are in good agreement with the measured ones. For the first time, we clearly identify cascaded resonance modes of wirebond transition structures with two different substrates, by the electric field distribution at the resonant frequencies. The transition between the CPW grounds of the two substrates act as a node separating the modes, and consequently forming both the mode of the entire structure and the cascade of two different resonant modes on two substrates
{"title":"Analysis of Microwave Resonances in a Wirebond Transition between Conductor-Backed Coplanar Waveguides (CBCPWs)","authors":"JuHwan Lim, Sungwoo Hwang","doi":"10.1109/EMICC.2006.282676","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282676","url":null,"abstract":"Microwave resonances in a wirebond transition between conductor-backed coplanar waveguides (CBCPWs) on two different substrates (alumina and silicon) are investigated by using on-wafer measurements and three-dimensional (3D) electromagnetic (EM) simulations in the frequency range from 1 to 26.5 GHz. The simulated resonant frequencies are in good agreement with the measured ones. For the first time, we clearly identify cascaded resonance modes of wirebond transition structures with two different substrates, by the electric field distribution at the resonant frequencies. The transition between the CPW grounds of the two substrates act as a node separating the modes, and consequently forming both the mode of the entire structure and the cascade of two different resonant modes on two substrates","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127123019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282785
A. Ghazinour, P. Wennekers, R. Reuter, Yin Yi, Hao Li, T. Bohm, D. Jahn
This paper presents a low noise transmitter chip for a 77 GHz FMCW radar system being comprised of push-pull voltage controlled oscillator with an output buffer, a frequency divider chain and a peak-to-peak detector. The measurements show an output power of approximately 11 dBm at each of the two differential 50 Omega loads over a wide tuning range. The measured phase noise is about -85 dBc/Hz at 100 KHz offset frequency. The circuit has been implemented in a Freescale Semiconductor 0.18 mum SiGe-BiCMOS technology. SiGe-HBTs with a typical ft/fmax of 200GHz/205GHz are used as active devices
{"title":"An Integrated SiGe-BiCMOS Low Noise Transmitter Chip with a Frequency Divider Chain for 77 GHz Applications","authors":"A. Ghazinour, P. Wennekers, R. Reuter, Yin Yi, Hao Li, T. Bohm, D. Jahn","doi":"10.1109/EMICC.2006.282785","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282785","url":null,"abstract":"This paper presents a low noise transmitter chip for a 77 GHz FMCW radar system being comprised of push-pull voltage controlled oscillator with an output buffer, a frequency divider chain and a peak-to-peak detector. The measurements show an output power of approximately 11 dBm at each of the two differential 50 Omega loads over a wide tuning range. The measured phase noise is about -85 dBc/Hz at 100 KHz offset frequency. The circuit has been implemented in a Freescale Semiconductor 0.18 mum SiGe-BiCMOS technology. SiGe-HBTs with a typical ft/fmax of 200GHz/205GHz are used as active devices","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125191129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282759
C. Chambon, L. Escotte, E. Gonneau
The signal and noise interaction in microwave amplifiers operating under nonlinear conditions is presented in this paper. The theoretical output noise spectrum calculated from a behavioral modeling based on the autocorrelation function is compared to experimental data obtained from a dedicated test-set. The noise mixing with a sinusoidal signal and its harmonics is then well described for both low-pass and band-pass filtered noise. Moreover, the model is well suited to fit AM-AM characteristics and total harmonic distortion
{"title":"Behavioral Modeling of Microwave Amplifiers Including Large-signal and Noise Interaction","authors":"C. Chambon, L. Escotte, E. Gonneau","doi":"10.1109/EMICC.2006.282759","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282759","url":null,"abstract":"The signal and noise interaction in microwave amplifiers operating under nonlinear conditions is presented in this paper. The theoretical output noise spectrum calculated from a behavioral modeling based on the autocorrelation function is compared to experimental data obtained from a dedicated test-set. The noise mixing with a sinusoidal signal and its harmonics is then well described for both low-pass and band-pass filtered noise. Moreover, the model is well suited to fit AM-AM characteristics and total harmonic distortion","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126148166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282748
E. Pichonat, J. Kuzmík, S. Bychikhin, D. Pogany, M. Poisson, B. Grimbert, C. Gaquière
The paper reports on the measurement of the temperature, i.e. self-heating effects, in active AlGaN/GaN HEMTs grown on sapphire substrate. Micro-Raman spectroscopy is used to measure temperature with 1 mum spatial resolution and 10degC temperature accuracy under the DC conditions. Transient interferometric method combined with a thermal simulation is used for analysis in the transient state. The results match well the results obtained by an electrical method performed both in DC and transient mode. The thermal resistance of 210 K/W (280 K/W) has been determined for 8 (2) finger device
{"title":"Temperature analysis of AlGaN/GaN High-Electron-Mobility Transistors using micro-Raman scattering spectroscopy and Transient Interferometric Mapping","authors":"E. Pichonat, J. Kuzmík, S. Bychikhin, D. Pogany, M. Poisson, B. Grimbert, C. Gaquière","doi":"10.1109/EMICC.2006.282748","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282748","url":null,"abstract":"The paper reports on the measurement of the temperature, i.e. self-heating effects, in active AlGaN/GaN HEMTs grown on sapphire substrate. Micro-Raman spectroscopy is used to measure temperature with 1 mum spatial resolution and 10degC temperature accuracy under the DC conditions. Transient interferometric method combined with a thermal simulation is used for analysis in the transient state. The results match well the results obtained by an electrical method performed both in DC and transient mode. The thermal resistance of 210 K/W (280 K/W) has been determined for 8 (2) finger device","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114136751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282747
A. Chini, S. Lavanga, M. Peroni, C. Lanzieri, A. Cetronio, V. Teppati, V. Camarchia, G. Ghione, G. Verzellesi
High breakdown voltage pHEMTs have been successfully developed by implementing a field-plate (FP) structure. Devices with and without FP have been fabricated on the same wafer in order to compare the improvements induced by adopting the FP. Both kinds of devices showed little or no current dispersion under pulse measurement conditions. Moreover the off-state breakdown voltage improved from 23V, for the devices without FP, to 38V for the field-plated devices. At 4GHz an output power as high as 1.6W/mm was measured for a FP device, resulting in a 60% improvement with respect to the device without FP. The fabricated structures were also evaluated by carrying out 2D numerical simulations. Experimental results on MIS pHEMTs have been explained by means of a donor trap at the SiN/GaAs interface located at 0.18eV from the GaAs conduction band. Finally, a good agreement between experimental and simulated device characteristics was obtained
{"title":"Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs","authors":"A. Chini, S. Lavanga, M. Peroni, C. Lanzieri, A. Cetronio, V. Teppati, V. Camarchia, G. Ghione, G. Verzellesi","doi":"10.1109/EMICC.2006.282747","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282747","url":null,"abstract":"High breakdown voltage pHEMTs have been successfully developed by implementing a field-plate (FP) structure. Devices with and without FP have been fabricated on the same wafer in order to compare the improvements induced by adopting the FP. Both kinds of devices showed little or no current dispersion under pulse measurement conditions. Moreover the off-state breakdown voltage improved from 23V, for the devices without FP, to 38V for the field-plated devices. At 4GHz an output power as high as 1.6W/mm was measured for a FP device, resulting in a 60% improvement with respect to the device without FP. The fabricated structures were also evaluated by carrying out 2D numerical simulations. Experimental results on MIS pHEMTs have been explained by means of a donor trap at the SiN/GaAs interface located at 0.18eV from the GaAs conduction band. Finally, a good agreement between experimental and simulated device characteristics was obtained","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114434004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282682
G. Pailloncy, J. Raskin
In this paper, we present a new de-embedding technique which does not require any dedicated RF test structure. This leads to great reduction of surface area on the wafer. Furthermore, this technique allows us to break through the re-contacting and dispersion problems that might affect the RF performance accuracy of future devices
{"title":"New de-embedding technique based on Cold-FET measurement","authors":"G. Pailloncy, J. Raskin","doi":"10.1109/EMICC.2006.282682","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282682","url":null,"abstract":"In this paper, we present a new de-embedding technique which does not require any dedicated RF test structure. This leads to great reduction of surface area on the wafer. Furthermore, this technique allows us to break through the re-contacting and dispersion problems that might affect the RF performance accuracy of future devices","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124754164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/EMICC.2006.282811
O. Jardel, Raymond Quéré, S. Heckmann, H. Bousbia, Denis Barataud, Eric Chartier, D. Floriot
A new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is proposed. This non-linear electrothermal and fully scalable model was designed with closed-form equations in order to reduce simulation times in complex circuits like high power amplifiers (HPA) and to have good convergence capabilities at high compression levels. This paper presents model topology and shows parameters extraction from pulsed I-V, pulsed [S]-parameters measurements. Simulations performed on a two-stage HPA with 20 HBTs devices have demonstrated the good convergence properties as well as a good correlation with measurements
{"title":"An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities","authors":"O. Jardel, Raymond Quéré, S. Heckmann, H. Bousbia, Denis Barataud, Eric Chartier, D. Floriot","doi":"10.1109/EMICC.2006.282811","DOIUrl":"https://doi.org/10.1109/EMICC.2006.282811","url":null,"abstract":"A new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is proposed. This non-linear electrothermal and fully scalable model was designed with closed-form equations in order to reduce simulation times in complex circuits like high power amplifiers (HPA) and to have good convergence capabilities at high compression levels. This paper presents model topology and shows parameters extraction from pulsed I-V, pulsed [S]-parameters measurements. Simulations performed on a two-stage HPA with 20 HBTs devices have demonstrated the good convergence properties as well as a good correlation with measurements","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129137510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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