{"title":"DC extraction of the temperature dependency of low field channel mobility and parasitic resistances in a GaN HEMT","authors":"Pradeep Dasari, S. Bhattacharya, S. Karmalkar","doi":"10.1109/EDSSC.2017.8126533","DOIUrl":null,"url":null,"abstract":"High temperature modelling of GaN HEMTs requires a knowledge of the temperature dependency of low field channel mobility and parasitic source / drain resistances. We discuss extraction of this dependency from drain current versus gate voltage curve at small drain-source voltage.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
High temperature modelling of GaN HEMTs requires a knowledge of the temperature dependency of low field channel mobility and parasitic source / drain resistances. We discuss extraction of this dependency from drain current versus gate voltage curve at small drain-source voltage.
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