{"title":"Dynamic characteristic evaluation of a 600V reverse blocking IGBT device","authors":"O. Korkh, A. Blinov","doi":"10.1109/AIEEE.2017.8270527","DOIUrl":null,"url":null,"abstract":"This paper presents an overview and analysis of operation of RB IGBT transistors. The series of experiments is devoted characterisation of 600 V, 85 A RB IGBT devices under hard and soft switching conditions using a double-pulse test circuit. The switching behaviour, particularly turn-on and turn-off characteristics, of these devices under various conditions are evaluated. Obtained results allow to assess the impact of reverse recovery process on the turn-on losses and compare the characteristic of RB IGBTs with various types of discrete diodes.","PeriodicalId":224275,"journal":{"name":"2017 5th IEEE Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 5th IEEE Workshop on Advances in Information, Electronic and Electrical Engineering (AIEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AIEEE.2017.8270527","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper presents an overview and analysis of operation of RB IGBT transistors. The series of experiments is devoted characterisation of 600 V, 85 A RB IGBT devices under hard and soft switching conditions using a double-pulse test circuit. The switching behaviour, particularly turn-on and turn-off characteristics, of these devices under various conditions are evaluated. Obtained results allow to assess the impact of reverse recovery process on the turn-on losses and compare the characteristic of RB IGBTs with various types of discrete diodes.
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