A Compact Programmable CMOS Reference With ±40μV Accuracy

S. Venkatesh, G. Serrano, C. Twigg, P. Hasler
{"title":"A Compact Programmable CMOS Reference With ±40μV Accuracy","authors":"S. Venkatesh, G. Serrano, C. Twigg, P. Hasler","doi":"10.1109/CICC.2006.320834","DOIUrl":null,"url":null,"abstract":"A compact programmable CMOS voltage reference that is determined by the charge difference between two floating-gate transistors is introduced in this paper. A prototype circuit has been implemented in a 0.35μm CMOS process; reference voltages ranging from 50mV - 0.6V have been achieved and initial accuracy of ±40muV has been demonstrated as well. Experimental results indicate a temperature sensitivity of approximately 53μV/degC for a nominal reference voltage of 0.4V over a temperature range of -60°C to 140°C","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Custom Integrated Circuits Conference 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2006.320834","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

A compact programmable CMOS voltage reference that is determined by the charge difference between two floating-gate transistors is introduced in this paper. A prototype circuit has been implemented in a 0.35μm CMOS process; reference voltages ranging from 50mV - 0.6V have been achieved and initial accuracy of ±40muV has been demonstrated as well. Experimental results indicate a temperature sensitivity of approximately 53μV/degC for a nominal reference voltage of 0.4V over a temperature range of -60°C to 140°C
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种精度为±40μV的紧凑型可编程CMOS基准
本文介绍了一种由两个浮栅晶体管之间的电荷差来确定的紧凑的可编程CMOS电压基准。原型电路已在0.35μm CMOS工艺中实现;参考电压范围为50mV - 0.6V,初始精度为±40muV。实验结果表明,在-60°C至140°C的温度范围内,当标称参考电压为0.4V时,温度灵敏度约为53μV/℃
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Compact outside-rail circuit structure by single-cascode two-transistor topology Width Quantization Aware FinFET Circuit Design Chip-to-Chip Inductive Wireless Power Transmission System for SiP Applications Wireline equalization using pulse-width modulation A 5Gb/s Transmitter with Reflection Cancellation for Backplane Transceivers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1