Memristor-based Optimum Legendre Low-Pass Filter

Zhazira Zhumabay, I. Dolzhikova
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Abstract

The paper suggests enhanced versions of an Optimum Legendre (L) low-pass filter obtained by adding memristive devices to the original circuit. The main aim is to observe the effects of connecting memristors of MS model to the passive components of Legendre filter. The results have been obtained by making simulations in LTspice software, which provide the information about magnitude frequency response, group delay and phase of the original and proposed models. One of memristive models has been implemented by connecting three memristors to the last three elements of a five-pole L filter. The second proposed model was constructed by inserting memristors after second and fifth components of the original circuit. Consequently, the ripple factor has been reduced and group delay variation has been narrowed. Also cutoff has been sharpened, phase response and transition have become smoother. These outcomes demonstrate that memristors introduced significant enhancement to the Optimum Legendre Low-Pass Filter and can find its applicability in analog and microwave circuit design.
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基于忆阻器的最佳勒让德低通滤波器
本文提出了通过在原电路中加入忆阻器件而得到的最优勒让德(L)低通滤波器的增强版本。主要目的是观察MS型忆阻器与勒让德滤波器无源元件的连接效果。在LTspice软件中进行了仿真,得到了原模型和所提模型的幅频响应、群延迟和相位等信息。通过将三个忆阻器连接到五极L滤波器的最后三个单元,实现了一种忆阻模型。第二种模型通过在原电路的第二和第五元件后插入忆阻器来构建。因此,减少了纹波因子,缩小了群延迟变化。同时,截止也得到了锐化,相响应和相变也变得更加平滑。这些结果表明,忆阻器对最佳勒让德低通滤波器有显著的增强作用,可以在模拟和微波电路设计中找到它的适用性。
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