SVX/silicon detector studies

L. Bagby, M. Johnson, R. Lipton, W. Gu
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引用次数: 2

Abstract

AC coupled silicon detectors, being used for the D/spl phi/ upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present /spl sim/50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3 /spl mu/m), SVXH (rad hard 1.2 /spl mu/m), and SVXIIb (rad soft 1.2 /spl mu/m) amplifier/readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on the detectors. This paper discusses the magnitude of the saturation and a possible solution to the problem.
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SVX/硅探测器研究
用于D/spl phi/升级的交流耦合硅检测器可能在耦合电容器上具有较大的电压。失效电容可以提供/spl sim/50 V到SVX, Silicon Vertex器件的输入端。我们测量了失效检测器耦合电容对SVXD (rad soft 3 /spl mu/m)、SVXH (rad hard 1.2 /spl mu/m)和SVXIIb (rad soft 1.2 /spl mu/m)放大器/读出器件的影响。测试结果表明,当过高电压直接施加到SVX通道时,相邻通道饱和。我们认为这种影响是由于SVX衬底内的电流扩散而不是探测器上的表面电流。本文讨论了饱和度的大小和可能的解决方法。
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