{"title":"Simulation of an optical gain of quantum well lasers taking into account the optical gain and electron density nonlinearities","authors":"V. Lysak, I. Sukhoivanov","doi":"10.1109/ICTON.2000.874161","DOIUrl":null,"url":null,"abstract":"The influence of electron concentration on optical gain of semiconductor lasers is analysed. The comparison by integrated gain model and approached models for a range of active layer thickness change from 50 up to 1000 /spl Aring/ was carried out. The expression of the approximation model parameters change from the active layer thickness is determined.","PeriodicalId":314041,"journal":{"name":"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTON.2000.874161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The influence of electron concentration on optical gain of semiconductor lasers is analysed. The comparison by integrated gain model and approached models for a range of active layer thickness change from 50 up to 1000 /spl Aring/ was carried out. The expression of the approximation model parameters change from the active layer thickness is determined.
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