Gizem Tendurus Caglar, Yunus Erdem Aras, Emirhan Urfali, D. Yılmaz, E. Ozbay, S. Nazlibilek
{"title":"GaN-based Single Stage Low Noise Amplifier for X-band Applications","authors":"Gizem Tendurus Caglar, Yunus Erdem Aras, Emirhan Urfali, D. Yılmaz, E. Ozbay, S. Nazlibilek","doi":"10.1109/mms55062.2022.9825558","DOIUrl":null,"url":null,"abstract":"Source degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stability. This work presents an MMIC design for the frequency band of 8–11 GHz by using HEMTs with source degeneration in 0.15 µm GaN on SiC technology. All design work is done in the Advanced Design System. The LNA delivers more than 6.9 dB gain with better than 8.5 dB and 9.5 dB input and output return losses, respectively. In addition, the gain ripple is around 2.7 dB. The noise figure of the amplifier is achieved below 1.1 dB with P1dB of 17.2 dBm and %12.7 drain efficiency within the operating bandwidth at the bias conditions of 9 V /20 mA.","PeriodicalId":124088,"journal":{"name":"2022 Microwave Mediterranean Symposium (MMS)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Microwave Mediterranean Symposium (MMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mms55062.2022.9825558","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Source degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stability. This work presents an MMIC design for the frequency band of 8–11 GHz by using HEMTs with source degeneration in 0.15 µm GaN on SiC technology. All design work is done in the Advanced Design System. The LNA delivers more than 6.9 dB gain with better than 8.5 dB and 9.5 dB input and output return losses, respectively. In addition, the gain ripple is around 2.7 dB. The noise figure of the amplifier is achieved below 1.1 dB with P1dB of 17.2 dBm and %12.7 drain efficiency within the operating bandwidth at the bias conditions of 9 V /20 mA.
在不降低噪声系数和稳定性的前提下，采用源退化hemt实现了良好的噪声匹配和较好的输入回波损失。本文提出了一种8-11 GHz频段的MMIC设计，采用源变性为0.15µm GaN on SiC的hemt技术。所有的设计工作都是在高级设计系统中完成的。LNA提供超过6.9 dB的增益，分别优于8.5 dB和9.5 dB的输入和输出回波损耗。此外，增益纹波在2.7 dB左右。在9 V /20 mA偏置条件下，放大器的噪声系数低于1.1 dB, P1dB为17.2 dBm，漏极效率为%12.7。
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
