Tradeoff between proximity and aspect-ratio in optimizing the field enhancement factor of large area field emitters

T. A. de Assis, F. F. Dall’Agnol, M. Cahay
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Abstract

The apex-field enhancement factor (aFEF) is regarded as a good parameter to characterize field electron emission (FE) devices. It quantifies how much the emitter sharp tip locally magnifies the applied external electrostatic field and enhances its FE properties. In a single tip form, the aFEF increases with the emitter's aspect ratio. However, when in a cluster or an array, the aFEF decreases due to depolarization fields from neighboring emitters. Hence, in large arrays, there is a tradeoff between the height and density to maximize its aFEF. There are experimental and theoretical works that analyze FE from carbon nanotube (CNT) arrays with fixed spacing $(c)$, fixed radii $(r)$, and varying height $(h)$. Those works discuss the existence of an aspect-ratio $(h/r)$ for which a maximum FEF is achieved. Here, we found for an infinite square array of identical hemisphere-on-cylindrical-post emitters a universal behavior, in which $\gamma$ scales as $\gamma\sim\gamma s(h/c)^{0.84}$, valid for aspect-ratios $h/r\gtrsim 50$ and $h\lesssim 0.7c$. For $h \gtrsim 0.7c$, the aFEF simply saturate at $\gamma s$.
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大面积场发射器场增强系数优化中邻近度与宽高比的权衡
顶场增强因子(aFEF)被认为是表征场电子发射器件的一个很好的参数。量化了发射极尖端局部放大外加静电场的程度和增强其有限元性能的程度。在单尖端形式下,aFEF随发射器长宽比的增加而增加。然而,当在集群或阵列中,由于邻近发射器的去极化场,afff减小。因此,在大型阵列中,需要在高度和密度之间进行权衡,以最大化其aff。对于固定间距$(c)$、固定半径$(r)$和可变高度$(h)$的碳纳米管(CNT)阵列,已有实验和理论工作对其进行了有限元分析。这些作品讨论了宽高比$(h/r)$的存在,该宽高比达到了最大FEF。在这里,我们发现了一个无限平方阵列的相同半球对圆柱后发射器的普遍行为,其中$\gamma$尺度为$\gamma\sim\gamma s(h/c)^{0.84}$,有效的纵横比$h/r\gtrsim 50$和$h\lesssim 0.7c$。对于$h \gtrsim 0.7c$, aFEF只是在$\gamma s$饱和。
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First-principles evidence of a constant effective field enhancement factor for carbon nanotube field emitters Non-topographic contrast in constant-current Scanning Field-Emission Microscopy (SFEM) Relative contributions to the emission within bundles of carbon nanocone emitters Electron emission properties of planar-type electron emission sources based on nanocrystalline silicon International Steering Committee (ISC)
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