{"title":"Polycrystalline CdS thin film prepared by metalorganic chemical vapor deposition","authors":"H. Uda, T. Fujii, S. Ikegami, H. Sonomura","doi":"10.1109/PVSC.1997.654143","DOIUrl":null,"url":null,"abstract":"Polycrystalline CdS thin film has been deposited on borosilicate glass substrate by metalorganic chemical vapor deposition using dimethyl cadmium and diethyl sulfide as source materials. The growth of CdS film occurred at substrate temperature within the range of 280-350/spl deg/C. The deposition rate increased with increasing VI/II molar ratio and showed the maximum value at the VI/II molar ratio of 4 for the substrate temperature of 300-350/spl deg/C. Thin CdS film with lower resistivity and high optical transmittance was prepared at 300/spl deg/C with over 1 to 4 range of VI/II molar ratio. The CdS film that deposited by MOCVD may be used as a window layer for CdS/CdTe solar cell.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654143","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Polycrystalline CdS thin film has been deposited on borosilicate glass substrate by metalorganic chemical vapor deposition using dimethyl cadmium and diethyl sulfide as source materials. The growth of CdS film occurred at substrate temperature within the range of 280-350/spl deg/C. The deposition rate increased with increasing VI/II molar ratio and showed the maximum value at the VI/II molar ratio of 4 for the substrate temperature of 300-350/spl deg/C. Thin CdS film with lower resistivity and high optical transmittance was prepared at 300/spl deg/C with over 1 to 4 range of VI/II molar ratio. The CdS film that deposited by MOCVD may be used as a window layer for CdS/CdTe solar cell.
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