Pub Date : 1997-12-31DOI: 10.1109/PVSC.1997.654078
F. Duerinclor, R. Einhaus, E. van Kerschaver, J. Szlutcik, J. Nijs, R. Mertens, M. Roy, S. Narayanan
This work presents a simple screen printing solar cell process based on firing the front contacts through a silicon nitride (SiN/sub x/) layer deposited by direct plasma enhanced chemical vapour deposition (PECVD). This processing sequence of only six steps results in an excellent front surface and bulk passivation. Efficiency improvements up to 1.5% compared to a state-of-the art processing sequence were obtained on Solarex multicrystalline material. Independently confirmed efficiencies of almost 16% were reached. First indications of the excellent passivation quality of SiN/sub x/ deposited by direct PECVD on p-Si are given.
{"title":"Increase in efficiency and material yield by use of PECVD silicon nitride in a simple screen printing process on Solarex material [solar cells]","authors":"F. Duerinclor, R. Einhaus, E. van Kerschaver, J. Szlutcik, J. Nijs, R. Mertens, M. Roy, S. Narayanan","doi":"10.1109/PVSC.1997.654078","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654078","url":null,"abstract":"This work presents a simple screen printing solar cell process based on firing the front contacts through a silicon nitride (SiN/sub x/) layer deposited by direct plasma enhanced chemical vapour deposition (PECVD). This processing sequence of only six steps results in an excellent front surface and bulk passivation. Efficiency improvements up to 1.5% compared to a state-of-the art processing sequence were obtained on Solarex multicrystalline material. Independently confirmed efficiencies of almost 16% were reached. First indications of the excellent passivation quality of SiN/sub x/ deposited by direct PECVD on p-Si are given.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122486732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-12-31DOI: 10.1109/PVSC.1997.654134
T. Gillespie, W.A. Miles, J. A. del Cueto
Reactively sputtered ZnO from metal targets enjoys dual advantages of higher deposition rates and lower target costs than RF sputtering from ceramic targets. High deposition rate and conductive, aluminum-doped zinc oxide (ZnO:Al) thin-film materials have been fabricated by DC-powered reactive sputtering from a zinc-aluminum metal alloy target. Reliable process control of material properties is exercised by cathode voltage control. Data is presented on the process control and materials properties of the ZnO:Al thin films produced by DC reactive sputtering from metal targets. These materials were incorporated in copper indium diselenide (CIS) photovoltaic devices, and have resulted in AM1.5 efficiencies over 10%.
{"title":"Reactive magnetron sputtering of transparent and conductive zinc oxide films deposited at high rates onto CIS/CIGS photovoltaic devices","authors":"T. Gillespie, W.A. Miles, J. A. del Cueto","doi":"10.1109/PVSC.1997.654134","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654134","url":null,"abstract":"Reactively sputtered ZnO from metal targets enjoys dual advantages of higher deposition rates and lower target costs than RF sputtering from ceramic targets. High deposition rate and conductive, aluminum-doped zinc oxide (ZnO:Al) thin-film materials have been fabricated by DC-powered reactive sputtering from a zinc-aluminum metal alloy target. Reliable process control of material properties is exercised by cathode voltage control. Data is presented on the process control and materials properties of the ZnO:Al thin films produced by DC reactive sputtering from metal targets. These materials were incorporated in copper indium diselenide (CIS) photovoltaic devices, and have resulted in AM1.5 efficiencies over 10%.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134239980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-12-31DOI: 10.1109/PVSC.1997.654185
J. Huang, Y. Lee, C. Toporow, G. Vendura, T. Jackson, C. Wronski
The fabrication of a-Si:H photovoltaic (PV) cells on polyimide or other flexible polymeric substrates presents significant challenges compared to cells fabricated on metallized glass or metal substrates. In particular, the low thermal conductivity of polyimide materials, and the difficulty of maintaining flatness, make substrate thermal control problematic. The authors report here a cell fabrication process on a 2 mil thick polyimide substrate using a pressure-sensitive silicone adhesive to provide thermal contact and to control substrate warping. Results are directly compared with cells similarly fabricated but on conventional substrates.
{"title":"Improved thermal control for a-Si:H photovoltaic cells fabricated on polymeric substrates","authors":"J. Huang, Y. Lee, C. Toporow, G. Vendura, T. Jackson, C. Wronski","doi":"10.1109/PVSC.1997.654185","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654185","url":null,"abstract":"The fabrication of a-Si:H photovoltaic (PV) cells on polyimide or other flexible polymeric substrates presents significant challenges compared to cells fabricated on metallized glass or metal substrates. In particular, the low thermal conductivity of polyimide materials, and the difficulty of maintaining flatness, make substrate thermal control problematic. The authors report here a cell fabrication process on a 2 mil thick polyimide substrate using a pressure-sensitive silicone adhesive to provide thermal contact and to control substrate warping. Results are directly compared with cells similarly fabricated but on conventional substrates.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115577737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-12-31DOI: 10.1109/PVSC.1997.654167
A. Slaoui, R. Monna, D. Angermeier, S. Bourdais, J. Muller
Deposition of polycrystalline silicon films on foreign substrates, such as silicon dioxide, graphite, alumina and mullite, was performed by means of a lamps heating-assisted CVD technique. We employed a cold wall reactor with a high temperature hydrogen reduction of trichlorosilane (SiHCl/sub 3/) as the Si precursor and trichloroborine (BCl/sub 3/) as a dopant source. The effects of operational parameters such as deposition temperature, flow rate, reactant gas, and substrates properties, on the silicon film characteristics (deposition rate, grain sizes and preferred orientations) were extensively investigated. Surface morphology and minority-carrier lifetime of the deposited films were also studied. High deposition rates in the range 1-4 /spl mu/m/min were achieved on all types of substrates. The grains size and preferential orientations were found to be dependent on the deposition parameters as well as on the used substrate.
{"title":"Polycrystalline silicon films formation on foreign substrates by a rapid thermal-CVD technique","authors":"A. Slaoui, R. Monna, D. Angermeier, S. Bourdais, J. Muller","doi":"10.1109/PVSC.1997.654167","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654167","url":null,"abstract":"Deposition of polycrystalline silicon films on foreign substrates, such as silicon dioxide, graphite, alumina and mullite, was performed by means of a lamps heating-assisted CVD technique. We employed a cold wall reactor with a high temperature hydrogen reduction of trichlorosilane (SiHCl/sub 3/) as the Si precursor and trichloroborine (BCl/sub 3/) as a dopant source. The effects of operational parameters such as deposition temperature, flow rate, reactant gas, and substrates properties, on the silicon film characteristics (deposition rate, grain sizes and preferred orientations) were extensively investigated. Surface morphology and minority-carrier lifetime of the deposited films were also studied. High deposition rates in the range 1-4 /spl mu/m/min were achieved on all types of substrates. The grains size and preferential orientations were found to be dependent on the deposition parameters as well as on the used substrate.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122071427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-12-31DOI: 10.1109/PVSC.1997.654331
A. Diniz, A.E. Prado, M. Mendonça, F. Almeida, C. A. Alvarenga
This paper describes the work done over in the field of photovoltaic technology in the State of Minas Gerais, from its R&D to the Rural Electrification Program. The analysis of the global solar radiation data (over 5 kWh/m/sup 2//day) has shown that photovoltaic systems can perform well all over the state, mainly in the north and northeast regions of the state. The potential for the utilisation of PV systems in Minas Gerais is large, mainly when considering the high number of consumers in rural remote areas that are not and cannot be supplied from CEMIG's grid in the immediate future or in the long term. As a consequence of the demonstration projects, which have shown that photovoltaics can perform well and be cost effective in rural areas, a Rural Electrification Program was launched. To support it a training program has been set up.
{"title":"Photovoltaic energy program in the state of Minas Gerais-Brazil","authors":"A. Diniz, A.E. Prado, M. Mendonça, F. Almeida, C. A. Alvarenga","doi":"10.1109/PVSC.1997.654331","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654331","url":null,"abstract":"This paper describes the work done over in the field of photovoltaic technology in the State of Minas Gerais, from its R&D to the Rural Electrification Program. The analysis of the global solar radiation data (over 5 kWh/m/sup 2//day) has shown that photovoltaic systems can perform well all over the state, mainly in the north and northeast regions of the state. The potential for the utilisation of PV systems in Minas Gerais is large, mainly when considering the high number of consumers in rural remote areas that are not and cannot be supplied from CEMIG's grid in the immediate future or in the long term. As a consequence of the demonstration projects, which have shown that photovoltaics can perform well and be cost effective in rural areas, a Rural Electrification Program was launched. To support it a training program has been set up.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"4 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125860204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-12-31DOI: 10.1109/PVSC.1997.654209
N. Fatemi, D. Wilt, P. Jenkins, V. G. Weizer, R. Hoffman, C. S. Murray, D. Scheiman, D. Brinker, D. Riley
A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the radiator for recuperation, thereby providing for high system efficiencies. Also, the use of a BSR reduces the requirements imposed on a front surface interference filter and may lead to using only an anti-reflection coating. As a result, MIMs are exposed to the entire radiator output, and with increasing output power density. MIMs were fabricated with an active area of 0.9/spl times/1 cm, and with 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were fabricated, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74 eV MIMs demonstrated an open-circuit voltage (Voc) of 6.16 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 0.84 A/cm/sup 2/, under flashlamp testing. The 0.55 eV modules demonstrated a Voc of 4.85 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm/sup 2/. The near IR reflectance (2-4 /spl mu/m) for both lattice-matched and lattice-mismatched structures was measured to be in the range of 80-85%. Latest electrical and optical performance results for these MIMs is presented.
一种用于热光伏(TPV)应用的单片互连模块(MIM)结构已经被开发出来。MIM器件由许多独立的InGaAs电池串联在单个半绝缘的InP衬底上组成。放置在基板背面的红外(IR)背表面反射器(BSR)将TPV散热器输出光谱中未使用的部分返回到散热器进行回收，从而提供高系统效率。此外，BSR的使用减少了对前表面干涉滤光片的要求，并可能导致只使用抗反射涂层。因此，mim暴露在整个散热器输出中，并且输出功率密度不断增加。制备了活性面积为0.9/spl次/ 1cm的MIMs, 15个细胞串联成单片结构。制备了晶格匹配和晶格不匹配的InGaAs/InP器件，带隙分别为0.74和0.55 eV。在闪光灯测试下，0.74 eV mim在短路电流(Jsc)为0.84 a /cm/sup 2/时的开路电压(Voc)为6.16 V，填充系数为74.2%。在Jsc为3.87 a /cm/sup /时，0.55 eV模块的Voc为4.85 V，填充系数为57.8%。晶格匹配和晶格不匹配结构的近红外反射率(2-4 /spl mu/m)均在80-85%之间。介绍了这些MIMs的最新电学和光学性能结果。
{"title":"InGaAs monolithic interconnected modules (MIMs)","authors":"N. Fatemi, D. Wilt, P. Jenkins, V. G. Weizer, R. Hoffman, C. S. Murray, D. Scheiman, D. Brinker, D. Riley","doi":"10.1109/PVSC.1997.654209","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654209","url":null,"abstract":"A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the radiator for recuperation, thereby providing for high system efficiencies. Also, the use of a BSR reduces the requirements imposed on a front surface interference filter and may lead to using only an anti-reflection coating. As a result, MIMs are exposed to the entire radiator output, and with increasing output power density. MIMs were fabricated with an active area of 0.9/spl times/1 cm, and with 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were fabricated, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74 eV MIMs demonstrated an open-circuit voltage (Voc) of 6.16 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 0.84 A/cm/sup 2/, under flashlamp testing. The 0.55 eV modules demonstrated a Voc of 4.85 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm/sup 2/. The near IR reflectance (2-4 /spl mu/m) for both lattice-matched and lattice-mismatched structures was measured to be in the range of 80-85%. Latest electrical and optical performance results for these MIMs is presented.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"517 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116235218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-12-31DOI: 10.1109/PVSC.1997.654325
R. Platz, D. Fischer, M.-A. Zufferey, J. Selvan, A. Haller, Arvind Shah
Amorphous silicon (a-Si:H) based solar cells are highly interesting in the context of hybrid (i.e. photovoltaic/thermal) solar energy conversion. First, their large area capability and the variety of possible substrate materials permit to apply a-Si:H PV modules directly on the surface of conventional heat collectors at low cost. Further, the low temperature coefficient of a-Si:H cells (0.1%/K) allows operation of a-Si:H solar modules at temperatures as high as 100/spl deg/C without substantial power loss. The authors focus on the thermal performance of such hybrid collectors based on a-Si:H cells, with emphasis on a ZnO coat on top of the solar cell. ZnO can be "tuned" to absorb the infrared part of sunlight and, at the same time, its emission coefficient for heat-radiation is nearly as low as that of the optimized selective surfaces used in thermal collectors. The authors propose a collector structure with a high potential for thermal conversion efficiency while maintaining high electrical conversion efficiency.
{"title":"Hybrid collectors using thin-film technology","authors":"R. Platz, D. Fischer, M.-A. Zufferey, J. Selvan, A. Haller, Arvind Shah","doi":"10.1109/PVSC.1997.654325","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654325","url":null,"abstract":"Amorphous silicon (a-Si:H) based solar cells are highly interesting in the context of hybrid (i.e. photovoltaic/thermal) solar energy conversion. First, their large area capability and the variety of possible substrate materials permit to apply a-Si:H PV modules directly on the surface of conventional heat collectors at low cost. Further, the low temperature coefficient of a-Si:H cells (0.1%/K) allows operation of a-Si:H solar modules at temperatures as high as 100/spl deg/C without substantial power loss. The authors focus on the thermal performance of such hybrid collectors based on a-Si:H cells, with emphasis on a ZnO coat on top of the solar cell. ZnO can be \"tuned\" to absorb the infrared part of sunlight and, at the same time, its emission coefficient for heat-radiation is nearly as low as that of the optimized selective surfaces used in thermal collectors. The authors propose a collector structure with a high potential for thermal conversion efficiency while maintaining high electrical conversion efficiency.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121498762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-12-31DOI: 10.1109/PVSC.1997.654244
V. A. Wilkinson, C. Goodbody, W. Williams
This paper presents details of a new close-match solar simulator developed for DERA's Space Power Laboratory for the accurate characterisation of space power multijunction solar cells. The authors present data on the simulator measurements of dual and triple junction solar cells. The measurements are compared with those made under less ideal spectral conditions.
{"title":"Measurement of multijunction cells under close-match conditions","authors":"V. A. Wilkinson, C. Goodbody, W. Williams","doi":"10.1109/PVSC.1997.654244","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654244","url":null,"abstract":"This paper presents details of a new close-match solar simulator developed for DERA's Space Power Laboratory for the accurate characterisation of space power multijunction solar cells. The authors present data on the simulator measurements of dual and triple junction solar cells. The measurements are compared with those made under less ideal spectral conditions.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128060806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-12-31DOI: 10.1109/PVSC.1997.654315
C. Whitaker, T. Townsend, J. Newmiller, D. King, W. Boyson, J. Kratochvil, D. Collier, D. Osborn
Rating a PV system is complicated by the difficulties of obtaining performance data under the "rating" conditions, the intricate relationships between PV output and prevailing conditions, and the desire for quick results at low cost. Since 1989, PVUSA has been rating PV systems using continuous data collection and a simple regression model. Sandia National Laboratories has developed an improved IV curve-based method for characterizing PV arrays. Several systems at the PVUSA facility in Davis, CA were subjected to both methods. The results of that work are presented in this paper.
{"title":"Application and validation of a new PV performance characterization method","authors":"C. Whitaker, T. Townsend, J. Newmiller, D. King, W. Boyson, J. Kratochvil, D. Collier, D. Osborn","doi":"10.1109/PVSC.1997.654315","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654315","url":null,"abstract":"Rating a PV system is complicated by the difficulties of obtaining performance data under the \"rating\" conditions, the intricate relationships between PV output and prevailing conditions, and the desire for quick results at low cost. Since 1989, PVUSA has been rating PV systems using continuous data collection and a simple regression model. Sandia National Laboratories has developed an improved IV curve-based method for characterizing PV arrays. Several systems at the PVUSA facility in Davis, CA were subjected to both methods. The results of that work are presented in this paper.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"373 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124669549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-12-31DOI: 10.1109/PVSC.1997.654069
A. Hubner, A. Aberle, R. Hezel
In addition to the front illumination, bifacial solar cells convert the Albedo radiation falling onto their rear surfaces and hence these devices have many interesting applications. It is a widespread assumption that, owing to the largely 'open' rear surface, bifacial cells absorb less infrared (IR) light and hence operate at lower temperatures compared to monofacial cells. In order to verify this assumption, the IR light absorption properties of bifacial and monofacial silicon solar cells are investigated and the correlation with the temperature behavior of the cells is shown. Furthermore, the device regions leading to the absorption of IR light are identified and the reasons for the observed temperature differences of the cells under specific operating conditions are discussed.
{"title":"Temperature behavior of monofacial and bifacial silicon solar cells","authors":"A. Hubner, A. Aberle, R. Hezel","doi":"10.1109/PVSC.1997.654069","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654069","url":null,"abstract":"In addition to the front illumination, bifacial solar cells convert the Albedo radiation falling onto their rear surfaces and hence these devices have many interesting applications. It is a widespread assumption that, owing to the largely 'open' rear surface, bifacial cells absorb less infrared (IR) light and hence operate at lower temperatures compared to monofacial cells. In order to verify this assumption, the IR light absorption properties of bifacial and monofacial silicon solar cells are investigated and the correlation with the temperature behavior of the cells is shown. Furthermore, the device regions leading to the absorption of IR light are identified and the reasons for the observed temperature differences of the cells under specific operating conditions are discussed.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132213618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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