Experimental verification of the resonance phase transistor concept

Abstract

In this paper we describe the experimental verification of the resonance phase effect for the first time. A silicon heterojunction bipolar transistor (HBT) has been enhanced to a resonance phase transistor (RPT) by the concept of transit time delay, using a thickened base layer. The RPT shows a current amplification far beyond its transit frequency f/sub T/. As the purpose of this paper is to demonstrate the resonance phase effect, a thick base layer of 120 nm was incorporated, thus decreasing the resonance frequency and facilitating the measurement. In the setup analyzed, a current gain of 6.5 dB has been measured at 40 GHz. By downscaling the base width the resonance frequency is expected to be increasable by a factor of four.