Small-signal model of partially-depleted SOI MOSFETs and its parameter extraction

D. Tomaszewski, L. Lukasiak, K. Domanski, A. Jakubowski
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引用次数: 1

Abstract

A new non-quasi static small-signal model of partially-depleted SOI MOSFETs is presented together with parameter extraction procedure. A method to eliminate parasitic capacitances from experimental data is also shown.
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部分耗尽SOI mosfet的小信号模型及其参数提取
提出了一种新的部分耗尽SOI mosfet的非准静态小信号模型,并给出了参数提取方法。并给出了一种从实验数据中消除寄生电容的方法。
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