Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004012
J. Martínez-Castillo, A. Díaz-Sánchez
A fully new CMOS differential transimpedance preamplifier structure for fiber optics receivers is presented. It is based on the common-gate topology with negative feedback, to increase the bandwidth of the circuit. A bandwidth of 2.30 GHz, with important noise reduction, was achieved. Intermodulation products of 40 dB below the carrier were obtained. Simulations were performed using BSIM3v3 models for HSPICE.
{"title":"Differential transimpedance amplifiers for communications systems based on common-gate topology","authors":"J. Martínez-Castillo, A. Díaz-Sánchez","doi":"10.1109/ICCDCS.2002.1004012","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004012","url":null,"abstract":"A fully new CMOS differential transimpedance preamplifier structure for fiber optics receivers is presented. It is based on the common-gate topology with negative feedback, to increase the bandwidth of the circuit. A bandwidth of 2.30 GHz, with important noise reduction, was achieved. Intermodulation products of 40 dB below the carrier were obtained. Simulations were performed using BSIM3v3 models for HSPICE.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115077757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004021
M. Jamal Deen, M. H. Kazemeini, S. Naseh
The paper describes CMOS voltage controlled oscillators (VCOs) with ultra-low power capabilities. It presents a discussion of their performance characteristics and modeling using simple physics-based expressions. The oscillators have been designed in a commercial 0.18 /spl mu/m CMOS technology and the transistors in the VCOs operate from weak to strong inversion modes. They have been tested and found functional with supply voltages from 80 mV up to 1.8 V. Experimental results show that the VCO's power consumption is mainly dynamic for the whole range of supply voltages used and powers down to the nW regime has been achieved. A new and important feature of this VCO is the use of the substrate voltage as an additional control for the frequency tunability. In this way, a new VCO with two voltage controls for its operating frequency has been realized. The detailed experimental results and comparison to calculations are presented and discussed.
{"title":"Ultra-low power VCOs - performance characteristics and modeling (invited)","authors":"M. Jamal Deen, M. H. Kazemeini, S. Naseh","doi":"10.1109/ICCDCS.2002.1004021","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004021","url":null,"abstract":"The paper describes CMOS voltage controlled oscillators (VCOs) with ultra-low power capabilities. It presents a discussion of their performance characteristics and modeling using simple physics-based expressions. The oscillators have been designed in a commercial 0.18 /spl mu/m CMOS technology and the transistors in the VCOs operate from weak to strong inversion modes. They have been tested and found functional with supply voltages from 80 mV up to 1.8 V. Experimental results show that the VCO's power consumption is mainly dynamic for the whole range of supply voltages used and powers down to the nW regime has been achieved. A new and important feature of this VCO is the use of the substrate voltage as an additional control for the frequency tunability. In this way, a new VCO with two voltage controls for its operating frequency has been realized. The detailed experimental results and comparison to calculations are presented and discussed.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"148 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128797503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004091
M. Cirrincione, M. Pucci, G. Cirrincione
This paper presents the solution for the on-line identification of an induction motor by using the total least-squares (TLS) algorithm. In particular the TLS EXIN neuron has been employed as it is the only algorithm which solves for the TLS problem in a simple recursive way. The results thus obtained are compared with those obtained with an OLS (ordinary least-square) algorithm to show the substantial equivalence of the two techniques if no noise is present in the measurements. This is the first step for facing up to the estimation of electrical parameters of induction machines in noisy environments (EMC problems), for example in industrial environments.
{"title":"Estimation of the electrical parameters of an induction motor with the TLS EXIN neuron","authors":"M. Cirrincione, M. Pucci, G. Cirrincione","doi":"10.1109/ICCDCS.2002.1004091","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004091","url":null,"abstract":"This paper presents the solution for the on-line identification of an induction motor by using the total least-squares (TLS) algorithm. In particular the TLS EXIN neuron has been employed as it is the only algorithm which solves for the TLS problem in a simple recursive way. The results thus obtained are compared with those obtained with an OLS (ordinary least-square) algorithm to show the substantial equivalence of the two techniques if no noise is present in the measurements. This is the first step for facing up to the estimation of electrical parameters of induction machines in noisy environments (EMC problems), for example in industrial environments.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130639880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004060
P. Czuma, P. Sczepanski
Optical gain-enhancement in active one dimensional photonic crystals is investigated as a function of the characteristic parameters of the system. Using the transfer matrix method, and applying the Bloch theorem, the dispersion relation and the analytical expression relating the gain coefficient to the system parameters (such as the period of the structure, contrast of the refractive indices, geometry of the primitive cell, as well as the number of primitive cells creating the photonic crystal) have been derived. It is shown that the geometry of the primitive cell, as well as the number of primitive cells of which the photonic crystal consists, have a crucial influence on the gain enhancement of the photonic structure.
{"title":"Analysis of the gain effect in one-dimension active photonic crystals","authors":"P. Czuma, P. Sczepanski","doi":"10.1109/ICCDCS.2002.1004060","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004060","url":null,"abstract":"Optical gain-enhancement in active one dimensional photonic crystals is investigated as a function of the characteristic parameters of the system. Using the transfer matrix method, and applying the Bloch theorem, the dispersion relation and the analytical expression relating the gain coefficient to the system parameters (such as the period of the structure, contrast of the refractive indices, geometry of the primitive cell, as well as the number of primitive cells creating the photonic crystal) have been derived. It is shown that the geometry of the primitive cell, as well as the number of primitive cells of which the photonic crystal consists, have a crucial influence on the gain enhancement of the photonic structure.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123902976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004064
R. Pernas, M. Sanchez, R. Peña-Sierra, A. Escoboda
A new method is presented to measure the thermal resistance (R/sub th/) of semiconductor lasers. We show that knowing the applied junction voltage, the electrical series resistance and the experimental I/sub th/ vs. T characteristic in pulsed operation is possible to evaluate R/sub th/. The key advantage of the method is that it avoids the measurement in continuous-wave (CW) operation. In particular we consider the case when I/sub th/ versus T characteristics exhibit kinks. To verify our method, CdZnSe, InGaAs, GaN and AlGaAs lasers were analyzed. We show that values obtained in this way agree quite well with the values measured by traditional methods.
提出了一种测量半导体激光器热阻(R/sub /)的新方法。我们表明，知道施加的结电压，串联电阻和脉冲操作中的实验I/sub / vs. T特性是可以评估R/sub /的。该方法的主要优点是避免了连续波(CW)工作时的测量。我们特别考虑当I/sub /与T特征表现出扭结的情况。为了验证我们的方法，对CdZnSe、InGaAs、GaN和AlGaAs激光器进行了分析。结果表明，用这种方法得到的值与用传统方法得到的值吻合得很好。
{"title":"A new method to determine the thermal resistance in semiconductor lasers","authors":"R. Pernas, M. Sanchez, R. Peña-Sierra, A. Escoboda","doi":"10.1109/ICCDCS.2002.1004064","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004064","url":null,"abstract":"A new method is presented to measure the thermal resistance (R/sub th/) of semiconductor lasers. We show that knowing the applied junction voltage, the electrical series resistance and the experimental I/sub th/ vs. T characteristic in pulsed operation is possible to evaluate R/sub th/. The key advantage of the method is that it avoids the measurement in continuous-wave (CW) operation. In particular we consider the case when I/sub th/ versus T characteristics exhibit kinks. To verify our method, CdZnSe, InGaAs, GaN and AlGaAs lasers were analyzed. We show that values obtained in this way agree quite well with the values measured by traditional methods.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124173662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004009
F. Ellinger, W. Bachtold
An ultra compact, varactor tuned phase shifter for adaptive antenna combining is presented. The passive circuit has been optimized for 802.11a and HIPERLAN applications. Only one control voltage is required to reach a phase control range of 360' from 5GHz up to 6GHz. At 5.5GHz, a maximum loss of 7.6 dB and an output compression point of higher than 12dBm were measured. The GaAs MMIC requires an effective circuit area of only 0.8 mm2.
{"title":"Varactor tuned phase snifter MMIC at C-band with 360/spl deg/ phase control for adaptive antenna combining","authors":"F. Ellinger, W. Bachtold","doi":"10.1109/ICCDCS.2002.1004009","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004009","url":null,"abstract":"An ultra compact, varactor tuned phase shifter for adaptive antenna combining is presented. The passive circuit has been optimized for 802.11a and HIPERLAN applications. Only one control voltage is required to reach a phase control range of 360' from 5GHz up to 6GHz. At 5.5GHz, a maximum loss of 7.6 dB and an output compression point of higher than 12dBm were measured. The GaAs MMIC requires an effective circuit area of only 0.8 mm2.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126420048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004100
A. Millan, F. Gil, G. Pesse, J. Restrepo, V. Guzmán
The use of a fixed switching frequency in the control of active filters produces considerable carrier components in the compensated system current. In this work a modified switching technique is proposed to reduce the amplitude of the carrier component for single phase systems.
{"title":"Active filtering for single phase systems using a modified switching technique","authors":"A. Millan, F. Gil, G. Pesse, J. Restrepo, V. Guzmán","doi":"10.1109/ICCDCS.2002.1004100","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004100","url":null,"abstract":"The use of a fixed switching frequency in the control of active filters produces considerable carrier components in the compensated system current. In this work a modified switching technique is proposed to reduce the amplitude of the carrier component for single phase systems.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131507425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004031
V. Kalganov, N. V. Mileshkina, E. V. Ostroumova
The photo-field emission properties of semiconductors at a very strong electric field as well as the parallel investigation of tunnel electron emission in metal-insulator-semiconductor heterostructures with a tunnel-transparent layer of an insulator have been studied. It was found that the self-consistent quantum well near the surface of semiconductor emitter tips can change the spectral region of photosensitivity of the radiation detectors, based on a semiconductor field emitter, and leads to the significant increase in their photosensitivity. The investigation of the metal-insulator-semiconductor heterostructures allows to realize the emission of hot electrons from the metal to the semiconductor, and makes possible to create the Auger-transistor based on the Al-SiO/sub 2/-n-Si structure which is the fastest operation semiconductor bipolar transistor.
{"title":"The influence of a strong electric field on the operating modes of the Auger transistor and the radiation detectors based on field emitters","authors":"V. Kalganov, N. V. Mileshkina, E. V. Ostroumova","doi":"10.1109/ICCDCS.2002.1004031","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004031","url":null,"abstract":"The photo-field emission properties of semiconductors at a very strong electric field as well as the parallel investigation of tunnel electron emission in metal-insulator-semiconductor heterostructures with a tunnel-transparent layer of an insulator have been studied. It was found that the self-consistent quantum well near the surface of semiconductor emitter tips can change the spectral region of photosensitivity of the radiation detectors, based on a semiconductor field emitter, and leads to the significant increase in their photosensitivity. The investigation of the metal-insulator-semiconductor heterostructures allows to realize the emission of hot electrons from the metal to the semiconductor, and makes possible to create the Auger-transistor based on the Al-SiO/sub 2/-n-Si structure which is the fastest operation semiconductor bipolar transistor.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133046889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004033
H. E. Aldrete-Vidrio, J. Santana, J. L. del Valle
This paper compares the important electrical parameters such as forward voltage drop, breakdown voltage, reverse leakage current and the reverse recovery time under the same operation conditions for different power rectifier diode structures. Such structures include conventional, conventional with an anode mosaic contact and a modified mosaic contact P-i-N diode structures. Based on standard process parameter, the technological, electrical and mixed-mode simulation is carried out using the advanced two-dimensional (2-D) device, circuit and system simulator, ISE-TCAD and compared to analytical doping profiles simulations showing that such structures are feasible.
{"title":"Stored charge control of P-i-N diodes: a simulation approach","authors":"H. E. Aldrete-Vidrio, J. Santana, J. L. del Valle","doi":"10.1109/ICCDCS.2002.1004033","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004033","url":null,"abstract":"This paper compares the important electrical parameters such as forward voltage drop, breakdown voltage, reverse leakage current and the reverse recovery time under the same operation conditions for different power rectifier diode structures. Such structures include conventional, conventional with an anode mosaic contact and a modified mosaic contact P-i-N diode structures. Based on standard process parameter, the technological, electrical and mixed-mode simulation is carried out using the advanced two-dimensional (2-D) device, circuit and system simulator, ISE-TCAD and compared to analytical doping profiles simulations showing that such structures are feasible.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133103005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/ICCDCS.2002.1004079
J. Strandman, R. Berntzen, T. Fjeldly, T. Ytterdal, M. Shur
We report on recent progress in the establishment of efficient and user-friendly on-line techniques for running real laboratory experiments over the Internet. For this purpose, we have recently developed an automated system, Lab-on-Web, based on modern Web and instrument control technology, including Component Object Model with extensions (COM+), Active Server Pages (ASP), Internet Server Application Programming Interface (ISAPI), and LabVIEW 6i. Advanced functionalities of modem Web browsers are utilized, allowing the system to communicate in terms of eXtensible Markup Language (XML), Scalable Vector Graphics (SVG), etc. The objective is to allow communication with minimum overhead, to provide a functional client interface, to establish a variety of experiments, and to allow flexibility in configuring experiments from the client side. The system has been used in senior student laboratories for remote characterization of electronic devices and circuits.
{"title":"Lab-on-Web: performing device characterization via Internet using modern Web technology","authors":"J. Strandman, R. Berntzen, T. Fjeldly, T. Ytterdal, M. Shur","doi":"10.1109/ICCDCS.2002.1004079","DOIUrl":"https://doi.org/10.1109/ICCDCS.2002.1004079","url":null,"abstract":"We report on recent progress in the establishment of efficient and user-friendly on-line techniques for running real laboratory experiments over the Internet. For this purpose, we have recently developed an automated system, Lab-on-Web, based on modern Web and instrument control technology, including Component Object Model with extensions (COM+), Active Server Pages (ASP), Internet Server Application Programming Interface (ISAPI), and LabVIEW 6i. Advanced functionalities of modem Web browsers are utilized, allowing the system to communicate in terms of eXtensible Markup Language (XML), Scalable Vector Graphics (SVG), etc. The objective is to allow communication with minimum overhead, to provide a functional client interface, to establish a variety of experiments, and to allow flexibility in configuring experiments from the client side. The system has been used in senior student laboratories for remote characterization of electronic devices and circuits.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133250582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：