V. Andreev, V. Aksenov, A. Kazantsev, T. Prutskikh, V. Rumyantsev, E. Tanklevskaya, V. Khvostikov
{"title":"Low-threshold quantum-well AlGaAs heterolasers fabricated by low-temperature liquid phase epitaxy and emitting at wavelengths 730-850 nm","authors":"V. Andreev, V. Aksenov, A. Kazantsev, T. Prutskikh, V. Rumyantsev, E. Tanklevskaya, V. Khvostikov","doi":"10.1063/1.41362","DOIUrl":null,"url":null,"abstract":"An investigation was made of lasers based on AlGaAs heterostructures and emitting at wavelengths of 730-850 nm, which were varied by altering the AlAs content in a single quantum well of 150 A thickness. These structures were grown by low-temperature liquid phase epitaxy. The lowest values of the threshold current density j th were 380 A/cm 2 for emission at λ l =760 nm and 120 A/cm 2 for λ l =845 nm; these values were obtained for a resonator L=700 μm long","PeriodicalId":316087,"journal":{"name":"Soviet physics. Semiconductors","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Soviet physics. Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.41362","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
An investigation was made of lasers based on AlGaAs heterostructures and emitting at wavelengths of 730-850 nm, which were varied by altering the AlAs content in a single quantum well of 150 A thickness. These structures were grown by low-temperature liquid phase epitaxy. The lowest values of the threshold current density j th were 380 A/cm 2 for emission at λ l =760 nm and 120 A/cm 2 for λ l =845 nm; these values were obtained for a resonator L=700 μm long
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