{"title":"Simulation of large-signal behavior of a GaAs low noise amplifier","authors":"A. Barić, Z. Butkovic","doi":"10.1109/MELCON.2000.880400","DOIUrl":null,"url":null,"abstract":"This paper investigates the linearity of a GaAs MESFET amplifier. A two-stage low noise amplifier is analyzed by PSPICE. The large-signal S parameters are determined for different load conditions, i.e. a resistive load, an active self-biased load and a cascode configuration. Additionally, the linearity is described in terms of two-tone intermodulation products of the 3/sup rd/ and 5/sup th/ order, as well as the 3/sup rd/ order intercept point (IP/sub 3/).","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MELCON.2000.880400","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper investigates the linearity of a GaAs MESFET amplifier. A two-stage low noise amplifier is analyzed by PSPICE. The large-signal S parameters are determined for different load conditions, i.e. a resistive load, an active self-biased load and a cascode configuration. Additionally, the linearity is described in terms of two-tone intermodulation products of the 3/sup rd/ and 5/sup th/ order, as well as the 3/sup rd/ order intercept point (IP/sub 3/).
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GaAs低噪声放大器大信号特性的仿真
本文研究了GaAs MESFET放大器的线性度。利用PSPICE对两级低噪声放大器进行了分析。根据不同的负载条件,即电阻性负载、主动自偏负载和级联码配置,确定大信号S参数。此外,线性度描述为3/sup /和5/sup /阶的双音互调产品,以及3/sup /阶截距点(IP/sub 3/)。
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