2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)最新文献
Pub Date : 2002-06-07DOI: 10.1109/MELCON.2000.880053
V. Gradisnik, J.D. Puksec
This paper describes color detection using a capacitance of np silicon photodiode, which is part of a standard CMOS technological process. When a voltage step is applied to a photodiode, the incremental charge distribution in the device is separated into positive and negative components, which are assigned to the respective contacts. This instantaneous change of charges is equal to the dark current and photocurrent. It corresponds both to the depletion capacitance charge of np junction and to the diffusion capacitance charge. Hence, since the photogenerated charge within the photodiode structure is dependent on the wavelength of absorbed light, the photodiode capacitance is also wavelength dependent. Emphasizing the physical mechanism, the capacitance behavior observed in a one-junction Si photodiode is analyzed using one-dimensional numerical modeling. The interpretation of a color detection was based on the analysis of the transient current in response to a small voltage step at constant illumination. The analysis included quasi-neutral charge density and space-charge charge density components. Different transient current response (charge and discharge) times to a small voltage step can be ascribed to light absorption. Using Fourier analysis dependent on light wavelength, can be translated from time domain to frequency domain. This enables use of np photodiode in colour detection.
{"title":"Color detection using a capacitance of np silicon photodiode","authors":"V. Gradisnik, J.D. Puksec","doi":"10.1109/MELCON.2000.880053","DOIUrl":"https://doi.org/10.1109/MELCON.2000.880053","url":null,"abstract":"This paper describes color detection using a capacitance of np silicon photodiode, which is part of a standard CMOS technological process. When a voltage step is applied to a photodiode, the incremental charge distribution in the device is separated into positive and negative components, which are assigned to the respective contacts. This instantaneous change of charges is equal to the dark current and photocurrent. It corresponds both to the depletion capacitance charge of np junction and to the diffusion capacitance charge. Hence, since the photogenerated charge within the photodiode structure is dependent on the wavelength of absorbed light, the photodiode capacitance is also wavelength dependent. Emphasizing the physical mechanism, the capacitance behavior observed in a one-junction Si photodiode is analyzed using one-dimensional numerical modeling. The interpretation of a color detection was based on the analysis of the transient current in response to a small voltage step at constant illumination. The analysis included quasi-neutral charge density and space-charge charge density components. Different transient current response (charge and discharge) times to a small voltage step can be ascribed to light absorption. Using Fourier analysis dependent on light wavelength, can be translated from time domain to frequency domain. This enables use of np photodiode in colour detection.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125370415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-05-29DOI: 10.1109/MELCON.2000.880037
G. Vardangalos, A. Pantelis
Businesses today are succeeding and growing by better understanding their customers' needs and aligning their operational processes that effectively service the customers. They are creating work processes and methods that are well linked and well operated. Utilizing a system of performance measures, they also are focusing on non-financial indicators to take advantage of key internal and external opportunities and responding to them swiftly. Beyond incremental gains, they are realizing dramatic gains in the critical areas affecting customer satisfaction-cycle time, cost, responsiveness and quality. This paper provider the reader with the architectural design and a detailed technical specification of the performance system. The proposed platform enables the implementation of performance systems on top of pre-existing, already running, information and workflow systems that support the daily business of the enterprise.
{"title":"An adaptable performance system based on the balanced scorecard approach for measuring performance of individuals and groups in a business environment","authors":"G. Vardangalos, A. Pantelis","doi":"10.1109/MELCON.2000.880037","DOIUrl":"https://doi.org/10.1109/MELCON.2000.880037","url":null,"abstract":"Businesses today are succeeding and growing by better understanding their customers' needs and aligning their operational processes that effectively service the customers. They are creating work processes and methods that are well linked and well operated. Utilizing a system of performance measures, they also are focusing on non-financial indicators to take advantage of key internal and external opportunities and responding to them swiftly. Beyond incremental gains, they are realizing dramatic gains in the critical areas affecting customer satisfaction-cycle time, cost, responsiveness and quality. This paper provider the reader with the architectural design and a detailed technical specification of the performance system. The proposed platform enables the implementation of performance systems on top of pre-existing, already running, information and workflow systems that support the daily business of the enterprise.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116775803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-05-29DOI: 10.1109/MELCON.2000.880398
J.D. Puksec, V. Gradisnik
The deep impurity added into the n- or p-type semiconductor is partially ionised. The probability function used to describe the occupation of a deep energy level, is the Fermi-Dirac function into which the entropy factor is introduced; /spl chi//sub p/ for donor level or /spl xi//sub n/ for acceptor level. The entropy factors are used to adjust the calculated and measured values. An effective deep energy level was defined depending on the predicted position of a deep level and on obtained entropy factor. Comparing the calculated and measured values for gold and platinum added into the n- and p-type silicon, we can see that the same predicted energy level is described with a quite different entropy factor in the n- and p-type semiconductor. According to the obtained positions of the effective deep energy levels, it can be concluded that in the compensation between shallow and deep impurity a deep level, which is nearest to the shallow level, must be considered. The other levels are neutral. It might happen that in the n-type semiconductor the higher acceptor level of platinum is occupied, while the lower one is empty. It seems that such a neutral energy level does not exist in the n-type, while in the p-type it does, and it is partially occupied.
{"title":"Influence of shallow impurity on steady-state probability function of multilevel deep impurity","authors":"J.D. Puksec, V. Gradisnik","doi":"10.1109/MELCON.2000.880398","DOIUrl":"https://doi.org/10.1109/MELCON.2000.880398","url":null,"abstract":"The deep impurity added into the n- or p-type semiconductor is partially ionised. The probability function used to describe the occupation of a deep energy level, is the Fermi-Dirac function into which the entropy factor is introduced; /spl chi//sub p/ for donor level or /spl xi//sub n/ for acceptor level. The entropy factors are used to adjust the calculated and measured values. An effective deep energy level was defined depending on the predicted position of a deep level and on obtained entropy factor. Comparing the calculated and measured values for gold and platinum added into the n- and p-type silicon, we can see that the same predicted energy level is described with a quite different entropy factor in the n- and p-type semiconductor. According to the obtained positions of the effective deep energy levels, it can be concluded that in the compensation between shallow and deep impurity a deep level, which is nearest to the shallow level, must be considered. The other levels are neutral. It might happen that in the n-type semiconductor the higher acceptor level of platinum is occupied, while the lower one is empty. It seems that such a neutral energy level does not exist in the n-type, while in the p-type it does, and it is partially occupied.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116958777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-05-29DOI: 10.1109/MELCON.2000.879685
J. Shikoski, R. Achkoski, U. Rechkoska
In this paper the importance of the electromagnetic interference (EMI) filters in order to improve the electric power quality is presented. The loads being supplied, such as computer, digital and telecommunication equipment, are very susceptible to EMI due to their low voltage operation and high density (crowded) design, and therefore require filtering of the EMI to prevent the load from being corrupted.
{"title":"Electromagnetic interference filters for power quality","authors":"J. Shikoski, R. Achkoski, U. Rechkoska","doi":"10.1109/MELCON.2000.879685","DOIUrl":"https://doi.org/10.1109/MELCON.2000.879685","url":null,"abstract":"In this paper the importance of the electromagnetic interference (EMI) filters in order to improve the electric power quality is presented. The loads being supplied, such as computer, digital and telecommunication equipment, are very susceptible to EMI due to their low voltage operation and high density (crowded) design, and therefore require filtering of the EMI to prevent the load from being corrupted.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123313730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-05-29DOI: 10.1109/MELCON.2000.880393
Y. Zlotnikov, Emily Rozenshine
The results of traffic measurements in the 155 Mbit/s ATM backbone network are presented and analyzed. The traffic characteristics measured, X(t), is a random number of ATM cells received by port-destination per given time interval. It is shown that X(t) can be described by a non-stationary random process. The cell traffic's self-similarity feature is demonstrated.
{"title":"Experimental study of correlated traffic in ATM backbone network","authors":"Y. Zlotnikov, Emily Rozenshine","doi":"10.1109/MELCON.2000.880393","DOIUrl":"https://doi.org/10.1109/MELCON.2000.880393","url":null,"abstract":"The results of traffic measurements in the 155 Mbit/s ATM backbone network are presented and analyzed. The traffic characteristics measured, X(t), is a random number of ATM cells received by port-destination per given time interval. It is shown that X(t) can be described by a non-stationary random process. The cell traffic's self-similarity feature is demonstrated.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115256582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-05-29DOI: 10.1109/MELCON.2000.880444
M. Abousetta, Z. Alhamdani, S. I. Al-Mously, M. Al-Daghistani, K. Omran
In the paper an attempt to solve the problem of electromagnetic wave (EMW) hazard caused by the radiation from hand-set mobile antenna as well as the problem of the hand-set mobile operation with differently tuned frequencies was suggested. A quarter-wave triple-two-element array antenna was implemented to fulfill these requirements. This antenna configuration was capable of operating with three different tuned frequencies 817.5 MHz, 1751.5 MHz and 1984 MHz. Moreover the radiation pattern of each tuned frequency has a notch in the direction of the handset user's head. Using such array antenna in the hand-set mobile telephone makes it compatible with the worldwide different operating systems namely GSM-900, PCS-1800, DCS-1900 and DECT and also safer to use than the hand-set mobile with single monopole or helical antenna.
{"title":"Triple-frequency operation for a hand-set mobile telephone with reduced EMW hazard","authors":"M. Abousetta, Z. Alhamdani, S. I. Al-Mously, M. Al-Daghistani, K. Omran","doi":"10.1109/MELCON.2000.880444","DOIUrl":"https://doi.org/10.1109/MELCON.2000.880444","url":null,"abstract":"In the paper an attempt to solve the problem of electromagnetic wave (EMW) hazard caused by the radiation from hand-set mobile antenna as well as the problem of the hand-set mobile operation with differently tuned frequencies was suggested. A quarter-wave triple-two-element array antenna was implemented to fulfill these requirements. This antenna configuration was capable of operating with three different tuned frequencies 817.5 MHz, 1751.5 MHz and 1984 MHz. Moreover the radiation pattern of each tuned frequency has a notch in the direction of the handset user's head. Using such array antenna in the hand-set mobile telephone makes it compatible with the worldwide different operating systems namely GSM-900, PCS-1800, DCS-1900 and DECT and also safer to use than the hand-set mobile with single monopole or helical antenna.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116625626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-05-29DOI: 10.1109/MELCON.2000.880403
M. Stasiak, M. Głąbowski, R. Pękal, P. Zwierzykowski
In the paper methods for increasing the traffic load capacity of switching networks servicing integrated traffic have been considered, i.e. the bandwidth reservation mechanism and rearrangement mechanism. Methods for calculating the upper and lower bound of blocking probability in TST (time space time) networks have been presented, which correspond to the minimum and maximum traffic capacity of the network. Calculation results have been compared with simulation data.
本文研究了提高综合业务交换网络业务负载能力的方法，即带宽保留机制和重排机制。提出了TST (time - space - time)网络中阻塞概率上界和下界的计算方法，它们对应于网络的最小和最大流量容量。计算结果与仿真数据进行了比较。
{"title":"On blocking probability equalisation in switching networks with rearrangement and reservation mechanisms","authors":"M. Stasiak, M. Głąbowski, R. Pękal, P. Zwierzykowski","doi":"10.1109/MELCON.2000.880403","DOIUrl":"https://doi.org/10.1109/MELCON.2000.880403","url":null,"abstract":"In the paper methods for increasing the traffic load capacity of switching networks servicing integrated traffic have been considered, i.e. the bandwidth reservation mechanism and rearrangement mechanism. Methods for calculating the upper and lower bound of blocking probability in TST (time space time) networks have been presented, which correspond to the minimum and maximum traffic capacity of the network. Calculation results have been compared with simulation data.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129622677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-05-29DOI: 10.1109/MELCON.2000.880018
L. Alatan, E. Niver, A. Mahale, A. Balashubramanian, R. P. Olin
The design, fabrication and testing of dual frequency bi-orthogonally polarized microstrip patch antenna structures for GPS receivers are studied. The considered configurations include orthogonally placed coplanar rectangular patches, orthogonally stacked rectangular patches and stacked square patches. The designed antennas are fabricated according to the optimized parameters, tuned in the presence of radomes and then measured for their bandwidth, input matching, radiation pattern, gain, and polarization characteristics. Comparisons of these different configurations are presented together with theoretical and experimental results.
{"title":"Dual frequency bi-orthogonally polarized antenna for GPS applications","authors":"L. Alatan, E. Niver, A. Mahale, A. Balashubramanian, R. P. Olin","doi":"10.1109/MELCON.2000.880018","DOIUrl":"https://doi.org/10.1109/MELCON.2000.880018","url":null,"abstract":"The design, fabrication and testing of dual frequency bi-orthogonally polarized microstrip patch antenna structures for GPS receivers are studied. The considered configurations include orthogonally placed coplanar rectangular patches, orthogonally stacked rectangular patches and stacked square patches. The designed antennas are fabricated according to the optimized parameters, tuned in the presence of radomes and then measured for their bandwidth, input matching, radiation pattern, gain, and polarization characteristics. Comparisons of these different configurations are presented together with theoretical and experimental results.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128644533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-05-29DOI: 10.1109/MELCON.2000.880453
A. Marsh, D. Kaklamani, H. Anastassiu, P. Shubitidze
Using high performance computing (HPC) as a remote service over the Internet is now becoming a realistic possibility to investigate and visualise computational electromagnetics problems. Additionally, the pragmatics of their utilisation can be abstracted by adopting a World Wide Web (WWW) interface. We analyse the behaviour of conformal microstrip patch antennas for aircraft communications. Microstrip patch antennas consist of a thin dielectric slab (usually called substrate) covering a rectangular metallic plate (ground plane). The radiating element of the antenna is a metallic patch located tangentially to the upper surface of the dielectric substrate, fed by an excitation implemented as a microstrip line or a coaxial cable. Due to their small size and weight, microstrip antennas, often clustered in arrays of several elements, are used in airborne communication systems. Since these arrays are usually positioned on the aircraft outer surface, they have to be conformal to the local portion of the latter. The way the composite antenna radiates is described by a three dimensional graph, called the far field pattern. The energy radiated to a given direction is proportional to the value of the graph in that particular direction. Protruding lobes of the graph correspond to high radiation directions. This paper concentrates on using a Web-based environment, not only for the connectivity, but also for the supportive tools of data entry, program initiation, result visualisation and even interactive modifications of the geometry and/or the electromagnetic properties of the examined problem.
{"title":"The P(MMAS) interactive environment: an Internet service coupling Web technology and HPCN to analyse conformal microstrip arrays","authors":"A. Marsh, D. Kaklamani, H. Anastassiu, P. Shubitidze","doi":"10.1109/MELCON.2000.880453","DOIUrl":"https://doi.org/10.1109/MELCON.2000.880453","url":null,"abstract":"Using high performance computing (HPC) as a remote service over the Internet is now becoming a realistic possibility to investigate and visualise computational electromagnetics problems. Additionally, the pragmatics of their utilisation can be abstracted by adopting a World Wide Web (WWW) interface. We analyse the behaviour of conformal microstrip patch antennas for aircraft communications. Microstrip patch antennas consist of a thin dielectric slab (usually called substrate) covering a rectangular metallic plate (ground plane). The radiating element of the antenna is a metallic patch located tangentially to the upper surface of the dielectric substrate, fed by an excitation implemented as a microstrip line or a coaxial cable. Due to their small size and weight, microstrip antennas, often clustered in arrays of several elements, are used in airborne communication systems. Since these arrays are usually positioned on the aircraft outer surface, they have to be conformal to the local portion of the latter. The way the composite antenna radiates is described by a three dimensional graph, called the far field pattern. The energy radiated to a given direction is proportional to the value of the graph in that particular direction. Protruding lobes of the graph correspond to high radiation directions. This paper concentrates on using a Web-based environment, not only for the connectivity, but also for the supportive tools of data entry, program initiation, result visualisation and even interactive modifications of the geometry and/or the electromagnetic properties of the examined problem.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128680241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-05-29DOI: 10.1109/MELCON.2000.880047
P. Kaplanis, C. Pattichis, L. Hadjileontiadis, S. Panas
The objective of this ongoing study is to investigate whether or not bispectral analysis (BS), a particular form of higher order spectra (HOS), may be utilized for analyzing the surface electromyographic signal (SEMG). The bicoherence index was used for characterizing the Gaussianity of the signal. Results indicate that SEMG signal distribution is highly nonGaussian at low and high levels of force whereas the distribution has its maximum Gaussianity at the mid level of maximum voluntary contraction (MVC), i.e. at 50%. A measure of the linearity of the signal, based on deciding whether or not the estimated bicoherence is constant, follows the reverse pattern with the measure of Gaussianity. The power spectrum's (PS) median frequency, decreases from 105 to 93 Hz with increase of force, whereas the number of turns and the number of zero crosses increase with force. Further work is currently in progress in order to evaluate the usefulness of HOS in normal subjects and subjects suffering from neuromuscular disorders.
{"title":"Bispectral analysis of surface EMG","authors":"P. Kaplanis, C. Pattichis, L. Hadjileontiadis, S. Panas","doi":"10.1109/MELCON.2000.880047","DOIUrl":"https://doi.org/10.1109/MELCON.2000.880047","url":null,"abstract":"The objective of this ongoing study is to investigate whether or not bispectral analysis (BS), a particular form of higher order spectra (HOS), may be utilized for analyzing the surface electromyographic signal (SEMG). The bicoherence index was used for characterizing the Gaussianity of the signal. Results indicate that SEMG signal distribution is highly nonGaussian at low and high levels of force whereas the distribution has its maximum Gaussianity at the mid level of maximum voluntary contraction (MVC), i.e. at 50%. A measure of the linearity of the signal, based on deciding whether or not the estimated bicoherence is constant, follows the reverse pattern with the measure of Gaussianity. The power spectrum's (PS) median frequency, decreases from 105 to 93 Hz with increase of force, whereas the number of turns and the number of zero crosses increase with force. Further work is currently in progress in order to evaluate the usefulness of HOS in normal subjects and subjects suffering from neuromuscular disorders.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129320868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：