Progress in electron-beam testing

Proceedings. VLSI and Computer Peripherals. COMPEURO 89 Pub Date : 1989-05-08 DOI:10.1109/CMPEUR.1989.93495

E. Wolfgang, S. Gorlich, E. Plies

引用次数: 2

Abstract

To describe the progress of e-beam testing in recent years, four subaspects are examined: electron-optical improvements, waveform processing, capacitive voltage measurements, and the integration of e-beam testing with computer-aided design and testing. For the case of megabit DRAMs it can be shown that the interconnection width of the uppermost level metallization does not continue to decrease, since a two-layer metallization is used in the 17-b DRAM. In the future, therefore, greater efforts must be invested in designing for e-beam testability, whereas the electron-optical properties of existing dedicated e-beam testers appear to be well suited to meet the demands of the coming years.<>

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电子束测试的进展

本文从电子束测试的光电改进、波形处理、电容电压测量以及电子束测试与计算机辅助设计和测试的集成四个方面阐述了电子束测试近年来的进展。对于兆比特DRAM的情况，可以显示出最上层金属化的互连宽度不会继续减小，因为在17-b DRAM中使用了两层金属化。因此，在未来，必须在电子束可测试性的设计上投入更多的努力，而现有的专用电子束测试仪的电子光学特性似乎很适合满足未来几年的需求。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings. VLSI and Computer Peripherals. COMPEURO 89

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