T. Temofonte, T. Braggins, P. Emtage, M. Bevan, R. Thomas, H. Nathanson, J. Halvis, R. Shiskowski, T. Wilson, D. Mccann
{"title":"All-silicon internal barrier detectors: a voltage-tunable LWIR staring focal plane technology","authors":"T. Temofonte, T. Braggins, P. Emtage, M. Bevan, R. Thomas, H. Nathanson, J. Halvis, R. Shiskowski, T. Wilson, D. Mccann","doi":"10.1109/IEDM.1992.307323","DOIUrl":null,"url":null,"abstract":"An all-silicon LWIR staring focal plane technology is described which has the potential of exceptionally high uniformity and resolution, 77K operation, and a demonstrated electronic tunability of the cut-off wavelength. p/sup +/np homojunction internal barrier detectors have quantum efficiencies of over 5% from 4.5 to 9.5 mu m and 0.2% at 12 mu m, exceeding the performance of all other internal photoemission detectors. Imagery (using a 8-11.5 mu m passband filter) with 128*128 p/sup +/np detector arrays bonded to silicon p-channel CMOS multiplexers was successfully demonstrated.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307323","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An all-silicon LWIR staring focal plane technology is described which has the potential of exceptionally high uniformity and resolution, 77K operation, and a demonstrated electronic tunability of the cut-off wavelength. p/sup +/np homojunction internal barrier detectors have quantum efficiencies of over 5% from 4.5 to 9.5 mu m and 0.2% at 12 mu m, exceeding the performance of all other internal photoemission detectors. Imagery (using a 8-11.5 mu m passband filter) with 128*128 p/sup +/np detector arrays bonded to silicon p-channel CMOS multiplexers was successfully demonstrated.<>
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