{"title":"A low power op-ampless bandgap reference with second-order compensation","authors":"Xiaoxin Guo, M. Cai, Xiaoyong He","doi":"10.1109/EDSSC.2017.8126434","DOIUrl":null,"url":null,"abstract":"An op-ampless second-order compensated bandgap reference with low temperature coefficient is proposed in this paper. The bandgap is second-order curvature-compensated by the temperature coefficient of the threshold voltage of a MOSFET. Simulated by Spectre, the output reference voltage is 1.102V with a 2.7ppm temperature coefficient from −40 °C to 160 °C and a −60dB PSRR at low frequency. The current dissipation of the whole circuit is 16μA. The layout area is 0.029mm2.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An op-ampless second-order compensated bandgap reference with low temperature coefficient is proposed in this paper. The bandgap is second-order curvature-compensated by the temperature coefficient of the threshold voltage of a MOSFET. Simulated by Spectre, the output reference voltage is 1.102V with a 2.7ppm temperature coefficient from −40 °C to 160 °C and a −60dB PSRR at low frequency. The current dissipation of the whole circuit is 16μA. The layout area is 0.029mm2.
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