S. Tsuda, Y. Kawashima, K. Sonoda, A. Yoshitomi, T. Mihara, S. Narumi, M. Inoue, S. Muranaka, T. Maruyama, T. Yamashita, Y. Yamaguchi, D. Hisamoto
{"title":"First demonstration of FinFET split-gate MONOS for high-speed and highly-reliable embedded flash in 16/14nm-node and beyond","authors":"S. Tsuda, Y. Kawashima, K. Sonoda, A. Yoshitomi, T. Mihara, S. Narumi, M. Inoue, S. Muranaka, T. Maruyama, T. Yamashita, Y. Yamaguchi, D. Hisamoto","doi":"10.1109/IEDM.2016.7838393","DOIUrl":null,"url":null,"abstract":"FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the first time. Excellent subthreshold characteristics and small threshold-voltage variability owing to a Fin-structure are clarified. It is demonstrated that Fin top-corner effects are well suppressed by incremental step pulse programming for source side injection. Highly reliable data retention at 150 °C after 250K program/erase cycles is confirmed for advanced automotive system applications.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the first time. Excellent subthreshold characteristics and small threshold-voltage variability owing to a Fin-structure are clarified. It is demonstrated that Fin top-corner effects are well suppressed by incremental step pulse programming for source side injection. Highly reliable data retention at 150 °C after 250K program/erase cycles is confirmed for advanced automotive system applications.
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