M. Vrazel, J. Chang, M. Brooke, N. Jokerst, A. Brown
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引用次数: 1
Abstract
We report on the hybrid integration of a thin film large area (250/spl times/250 /spl mu/m/sup 2/, low capacitance (0.43 pF), high responsivity (0.5 A/W, with no AR coating) InGaAs/InP inverted-MSM onto a Si CMOS differential receiver circuit. This integrated receiver demonstrated a bit-error-rate of 10/sup -11/ at 414 Mbps and 0.1/spl times/10/sup -10/ at 480 Mbps. The alignment tolerance of this receiver has been modeled and measured at 200 Mbps, and the theoretical results correspond quite well to experimental data.
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