Electrical properties and microscopic structure of amorphous chalcogenides

D. Ielmini, A. Lacaita
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引用次数: 2

Abstract

The quantitative description of conduction in amorphous chalcogenides is one of the major challenges in modeling phase change memory (PCM) devices. The disordered phase is characterized by a spatially dependent band-structure, which also changes with time driven by the spontaneous relaxation toward more energetically favorable configurations. The work reviews some recent models of amorphous conduction that, accounting for the essential features of this changing energy landscape and consistently explaining the experimental results as well as their statistical dependences.
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无定形硫族化合物的电学性质和微观结构
非晶硫族化合物导电的定量描述是相变存储(PCM)器件建模的主要挑战之一。无序相的特征是具有空间依赖的能带结构,并且在自发弛豫的驱动下,能带结构随时间变化而向更有利于能量的构型转变。这项工作回顾了一些最近的非晶传导模型,这些模型解释了这种不断变化的能量景观的基本特征,并一致地解释了实验结果以及它们的统计依赖性。
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