Characteristic Evaluation of Ga-Sn-O Thin Films by Hall Measurement

Abstract

We investigated the Hall effect of the GTO thin film and the GTO thin film transistor (TFT). The Hall effect mobility in the GTO thin film was 1.21 cm2Ns, which was much smaller than the field effect mobility of the GTO TFT. Next, we made a GTO TFT. The highest field effect mobility of GTO TFT was 8.04 cm2Ns. Moreover, the highest Hall effect mobility of GTO TFT was 7.66 cm2Ns. Hall effect mobility and field effect mobility were almost the same. In addition, the GTO TFT showed higher Hall effect mobility than the GTO thin film. It was thought that the Fermi level rose by applying the gate voltage.