Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437410
T. Sameshima, M. Hasumi, Y. Hirokawa, Taichi Watanabe, Maui Hino, Gen Kojitani, T. Mizuno
Heat treatment in liquid water at 80°C well passivated the surfaces of 20-Ωcm p-type crystalline silicon substrate and a high photo-induced minority carrier lifetime, τeff of 4.0×10−5 s was obtained. 100-nm-thick SiO2 layers were formed on the liquid water passivated surfaces at 300°C by the plasma chemical vapor deposition method to form the metal-oxide-semiconductor (MOS) structure. The MOS samples were subsequently annealed at 300°C for 1 h. The high frequency capacitance response with the bias voltage (C-V) measurement resulted in a threshold voltage, a density of interface defects, and a density of fixed charge as −0.35 V, 2.2×1011 cm−2eV−1, and 1.1×1011 cm−2, respectively, while they were −9.7 V, 1.4×1012 cm−2eV−1, and 2.3×1012 cm−2 in the case of no liquid water heat treatment.
{"title":"Surface Passivation of Crystalline Silicon by Heat Treatment in Liquid Water and its Application to Improve the Interface Properties of Metal-Oxide-Semiconductor Structures","authors":"T. Sameshima, M. Hasumi, Y. Hirokawa, Taichi Watanabe, Maui Hino, Gen Kojitani, T. Mizuno","doi":"10.23919/AM-FPD.2018.8437410","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437410","url":null,"abstract":"Heat treatment in liquid water at 80°C well passivated the surfaces of 20-Ωcm p-type crystalline silicon substrate and a high photo-induced minority carrier lifetime, τ<inf>eff</inf> of 4.0×10<sup>−5</sup> s was obtained. 100-nm-thick SiO<inf>2</inf> layers were formed on the liquid water passivated surfaces at 300°C by the plasma chemical vapor deposition method to form the metal-oxide-semiconductor (MOS) structure. The MOS samples were subsequently annealed at 300°C for 1 h. The high frequency capacitance response with the bias voltage (C-V) measurement resulted in a threshold voltage, a density of interface defects, and a density of fixed charge as −0.35 V, 2.2×10<sup>11</sup> cm<sup>−2</sup>eV<sup>−1</sup>, and 1.1×10<sup>11</sup> cm<sup>−2</sup>, respectively, while they were −9.7 V, 1.4×10<sup>12</sup> cm<sup>−2</sup>eV<sup>−1</sup>, and 2.3×10<sup>12</sup> cm<sup>−2</sup> in the case of no liquid water heat treatment.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115616780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437398
Y. Nonoguchi
This paper presents a rational method for doping π-electronic materials including carbon nanotube (CNT) films, and its application in the fabrication of thermoelectric power generators. Particularly, n-type doping developed here enables the unprecedented stabilization of n-type CNTs, which is beneficial for the development of tough and flexible thermoelectric generators. At the same time, the present methodology with structure-specific CNTs is used for the investigation of thermoelectric transport in one-dimensional semiconductors
{"title":"Thermoelectric Transport in Doped Carbon Nanotube Films","authors":"Y. Nonoguchi","doi":"10.23919/AM-FPD.2018.8437398","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437398","url":null,"abstract":"This paper presents a rational method for doping π-electronic materials including carbon nanotube (CNT) films, and its application in the fabrication of thermoelectric power generators. Particularly, n-type doping developed here enables the unprecedented stabilization of n-type CNTs, which is beneficial for the development of tough and flexible thermoelectric generators. At the same time, the present methodology with structure-specific CNTs is used for the investigation of thermoelectric transport in one-dimensional semiconductors","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125811427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437370
Suy Kimsong, T. Kaneko, Y. Hara, A. Masuda, M. Isomura
Potential induced degradation (PID) is an undesirable phenomenon in crystalline Si photovoltaic (PV) modules, since it causes a performance loss in the PV modules. Meanwhile, PV systems installed in the large open-area have a possibility to be exposed to lightning strike, however there were few studies about effects of lightning strike on crystalline Si PV modules. In this study, we focused on effect of lightning impulse voltage on PID in crystalline Si PV modules. Lightning strike was simulated by a high impulse voltage generator. To reveal the effects of impulse voltage on PID in the modules, several investigations were used such as dark current-voltage measurement, electroluminescence image, and leakage current measurement. As a result, the lightning impulse voltages (−20 kV, −40kV, and +20 kV) completely accelerated the PID in the crystalline Si PV modules.
{"title":"Effect of High Impulse Voltage on Potential Induced Degradation in Crystalline Silicon Photovoltaic Modules","authors":"Suy Kimsong, T. Kaneko, Y. Hara, A. Masuda, M. Isomura","doi":"10.23919/AM-FPD.2018.8437370","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437370","url":null,"abstract":"Potential induced degradation (PID) is an undesirable phenomenon in crystalline Si photovoltaic (PV) modules, since it causes a performance loss in the PV modules. Meanwhile, PV systems installed in the large open-area have a possibility to be exposed to lightning strike, however there were few studies about effects of lightning strike on crystalline Si PV modules. In this study, we focused on effect of lightning impulse voltage on PID in crystalline Si PV modules. Lightning strike was simulated by a high impulse voltage generator. To reveal the effects of impulse voltage on PID in the modules, several investigations were used such as dark current-voltage measurement, electroluminescence image, and leakage current measurement. As a result, the lightning impulse voltages (−20 kV, −40kV, and +20 kV) completely accelerated the PID in the crystalline Si PV modules.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126863059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437444
A. Kronemeijer, I. Katsouras, P. Poodt, H. Akkerman, A. V. van Breemen, G. Gelinck
We present recent developments on flexible a-IGZO TFT technology scaling in terms of TFT channel length and operating voltage, as well as manufacturing cost optimization with a focus on R2R processing compatibility. We present progress on the relevant technology building blocks; (i) R2R compatible TFT architecture, (ii) (multilevel) nanoimprint lithography and (iii) S-ALD deposited TFT materials. Additionally, we show a developing application that drives scaling of the technology, namely a monolithically integrated flexible AMOLED display with in-display fingerprint detection.
{"title":"Flexible a-IGZO TFT Technology: New Developments & Applications","authors":"A. Kronemeijer, I. Katsouras, P. Poodt, H. Akkerman, A. V. van Breemen, G. Gelinck","doi":"10.23919/AM-FPD.2018.8437444","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437444","url":null,"abstract":"We present recent developments on flexible a-IGZO TFT technology scaling in terms of TFT channel length and operating voltage, as well as manufacturing cost optimization with a focus on R2R processing compatibility. We present progress on the relevant technology building blocks; (i) R2R compatible TFT architecture, (ii) (multilevel) nanoimprint lithography and (iii) S-ALD deposited TFT materials. Additionally, we show a developing application that drives scaling of the technology, namely a monolithically integrated flexible AMOLED display with in-display fingerprint detection.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129940648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437408
Sumio Sugiski, Ayata Kurasaki, R. Tanaka, T. Matsuda, M. Kimura
Variable Resistive Memorys (VRMs) are promising devices with many advantages such as simple structure, high speed, etc. Amorphous oxide semiconductors (AOS) thin films have been used for many electric devices. In this presentation, we propose a new AOS, Ga-Sn-O (GTO) thin film for a VRM. We fabricated the VRM active layer using GTO and electrodes using aluminum. The Al/GTO/Al cell VRM showed the bipolar switching characteristic of a switching voltage (~2.0 V), ON/OFF ratio ~10) and reproducibility (~50).
{"title":"Room Temperature Fabrication of Variable Resistive Memory Using Ga-Sn-O Thin Film","authors":"Sumio Sugiski, Ayata Kurasaki, R. Tanaka, T. Matsuda, M. Kimura","doi":"10.23919/AM-FPD.2018.8437408","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437408","url":null,"abstract":"Variable Resistive Memorys (VRMs) are promising devices with many advantages such as simple structure, high speed, etc. Amorphous oxide semiconductors (AOS) thin films have been used for many electric devices. In this presentation, we propose a new AOS, Ga-Sn-O (GTO) thin film for a VRM. We fabricated the VRM active layer using GTO and electrodes using aluminum. The Al/GTO/Al cell VRM showed the bipolar switching characteristic of a switching voltage (~2.0 V), ON/OFF ratio ~10) and reproducibility (~50).","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131925753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437439
V. F. Paz, Stephan Kohlenbecker, Efstathios Persidis
To ensure end-user readability, displays exposed to sunlight need special surface treatments. Especially in automotive applications, rough antiglare (AG) surface treatments are applied to the top surface. However, a rough surface on top of a brilliant display has a direct impact on its image quality. Carefully designing the AG surface allows a compromise between reflection suppression and image quality. One of the undesired effects is the so-called “visual sparkling”, where the displayed image appears to show an uneven luminance distribution especially in areas where solid colors are shown. This effect itself is quite subjective for that it is necessary to quantify it in a reproducible way. In this work, we present a simple yet effective method for characterization of the sparkle effect based on the evaluation of image uniformity with help of grey-value histogram extraction and fitting with a simple normal distribution.
{"title":"Implementation of a sparkle characterization method for anti-glare layers on automotive-displays","authors":"V. F. Paz, Stephan Kohlenbecker, Efstathios Persidis","doi":"10.23919/AM-FPD.2018.8437439","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437439","url":null,"abstract":"To ensure end-user readability, displays exposed to sunlight need special surface treatments. Especially in automotive applications, rough antiglare (AG) surface treatments are applied to the top surface. However, a rough surface on top of a brilliant display has a direct impact on its image quality. Carefully designing the AG surface allows a compromise between reflection suppression and image quality. One of the undesired effects is the so-called “visual sparkling”, where the displayed image appears to show an uneven luminance distribution especially in areas where solid colors are shown. This effect itself is quite subjective for that it is necessary to quantify it in a reproducible way. In this work, we present a simple yet effective method for characterization of the sparkle effect based on the evaluation of image uniformity with help of grey-value histogram extraction and fitting with a simple normal distribution.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127429536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437430
Keisuke Ikushima, J. Shimura, T. Matsuda, M. Kimura, H. Yamane, Y. Nakashima
Neural networks are information processing models based on the human brain, and they have been activity studied. However, in order to realize the hardware of the neural network, it is necessary to achieve high integration. In this study, we fabricated synapses for neural networks using the Ga-Sn-O (GTO) thin films, which is rare-metal-free amorphous oxide semiconductor. This synapse was a planar type and found to have degradation characteristics applicable to modified Hebb's learning rule. We used this result to deposit the GTO thin film on LSI surface. By considering the LSI as a neuron, it was possible to satisfy the relation between the synapse and the neuron, and as a result, a simple neural network could be constructed. Finally, we succeeded in character learning experiment using it
{"title":"Research and development of Ga-Sn-O thin films for application to neural networks","authors":"Keisuke Ikushima, J. Shimura, T. Matsuda, M. Kimura, H. Yamane, Y. Nakashima","doi":"10.23919/AM-FPD.2018.8437430","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437430","url":null,"abstract":"Neural networks are information processing models based on the human brain, and they have been activity studied. However, in order to realize the hardware of the neural network, it is necessary to achieve high integration. In this study, we fabricated synapses for neural networks using the Ga-Sn-O (GTO) thin films, which is rare-metal-free amorphous oxide semiconductor. This synapse was a planar type and found to have degradation characteristics applicable to modified Hebb's learning rule. We used this result to deposit the GTO thin film on LSI surface. By considering the LSI as a neuron, it was possible to satisfy the relation between the synapse and the neuron, and as a result, a simple neural network could be constructed. Finally, we succeeded in character learning experiment using it","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116852677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437432
D. Matsuo, T. Ikeda, S. Kishida, Yoshitaka Setogucti, Y. Andoh, Ryoko Miyanaga, M. Fujii, Y. Uraoka
This report shows that an amorphous a-InGaZnO (IGZO) thin film transistor (TFT) can control the threshold voltage ($V_{th}$) without thermal annealing process when depositing a-IGZO using an inductively coupled plasma (ICP) sputtering system. A two layer a-IGZO TFT with controlled oxygen concentrations was fabricated using the ICP sputtering system developed for high density thin film deposition. As a result of evaluation of TFT characteristics, a-IGZO TFTs with changed $V_{th}$ could be fabricated without a thermal annealing process.
{"title":"Threshold Voltage Control of In-Ga-Zn-O TFT without Thermal Annealing Process by Inductively Coupled Plasma Sputtering System","authors":"D. Matsuo, T. Ikeda, S. Kishida, Yoshitaka Setogucti, Y. Andoh, Ryoko Miyanaga, M. Fujii, Y. Uraoka","doi":"10.23919/AM-FPD.2018.8437432","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437432","url":null,"abstract":"This report shows that an amorphous a-InGaZnO (IGZO) thin film transistor (TFT) can control the threshold voltage ($V_{th}$) without thermal annealing process when depositing a-IGZO using an inductively coupled plasma (ICP) sputtering system. A two layer a-IGZO TFT with controlled oxygen concentrations was fabricated using the ICP sputtering system developed for high density thin film deposition. As a result of evaluation of TFT characteristics, a-IGZO TFTs with changed $V_{th}$ could be fabricated without a thermal annealing process.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130073679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437393
Y. Muto
Display installed in all car, there are special specification requirements for in-vehicle displays not in consumer displays. What is special about specification are three points, improvement of design by blending into car interior, ensure the visibility from the driver's eye-point, safety function which ensure driver's safety as a device. Against these requirements, we will report since we achieved to ensure specific performance by unique technology development. We will show and share our future image of in-vehicle display.
{"title":"Evolution of in-vehicle display technology and Innovation of the cockpit system","authors":"Y. Muto","doi":"10.23919/AM-FPD.2018.8437393","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437393","url":null,"abstract":"Display installed in all car, there are special specification requirements for in-vehicle displays not in consumer displays. What is special about specification are three points, improvement of design by blending into car interior, ensure the visibility from the driver's eye-point, safety function which ensure driver's safety as a device. Against these requirements, we will report since we achieved to ensure specific performance by unique technology development. We will show and share our future image of in-vehicle display.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128846303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.23919/AM-FPD.2018.8437343
K. Imokawa, N. Tanaka, A. Suwa, D. Nakamura, T. Sadoh, T. Goto, H. Ikenoue
We characterize poly-Si thin films doped by KrF excimer laser irradiation with a phosphoric-acid coating. In this method, implantation and dopant activation can be performed simultaneously without damage of the poly-Si crystallization. After the laser doping, the mobility, carrier concentration, activation ratio, and resistivity of poly-Si were 61 cm2/Vs, 1.5×1018 cm−3, 14.6 %, and 0.08 Ω.cm, respectively.
{"title":"Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication","authors":"K. Imokawa, N. Tanaka, A. Suwa, D. Nakamura, T. Sadoh, T. Goto, H. Ikenoue","doi":"10.23919/AM-FPD.2018.8437343","DOIUrl":"https://doi.org/10.23919/AM-FPD.2018.8437343","url":null,"abstract":"We characterize poly-Si thin films doped by KrF excimer laser irradiation with a phosphoric-acid coating. In this method, implantation and dopant activation can be performed simultaneously without damage of the poly-Si crystallization. After the laser doping, the mobility, carrier concentration, activation ratio, and resistivity of poly-Si were 61 cm<sup>2</sup>/Vs, 1.5×10<sup>18</sup> cm<sup>−3</sup>, 14.6 %, and 0.08 Ω.cm, respectively.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123126388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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