M. Hamanaka, Vinícius do Lago Pimentel, Wellington Oliveira Avelino, Viviane Nogueira Hamanaka, Fernando Fuzinatto Dall'Agnol, Gilberto Medeiros Ribeiro
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引用次数: 0
Abstract
We developed an apparatus to measure the work function using a field emission retarding potential (FERP) technique. In this paper, we describe the basics of FERP and the measurement procedures to determine the work function of indium tin oxide (ITO) and aluminum thin films, which are used as electrodes in a large number of Organic Electronic devices. The system developed allows for rapid screening of candidate materials and surface processes for appropriate engineering of device electronic properties.
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