Performance Assessment of Sub Threshold Leakage Current Reduction and Power Dissipation in MOSFET for Si, SiGe and GaN Using COMSOL MULTIPHYSICS

Abstract

This paper illustrates the models of sub-threshold leakage current, threshold voltage and power dissipation depending on the oxide thickness and gate-source voltage for n-channel MOSFET using three different materials like silicon, GaN, SiGe alloy are derived, examined and analyzed. The variation of oxide thickness and drain dopant concentrationhas been included in the working models. In this work, the effects of thesub-threshold leakage current models were analyzed with varying threshold voltage parameter using the COMSOL MULTIPHYSICS software.