A study of harmonic spatial propagation along AC power lines of meshed power systems

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Iet Circuits Devices & Systems Pub Date : 2022-01-04 DOI:10.1049/cds2.12107
Chengxi Liu, Zhen Gong, Filipe Faria da Silva, Qiupin Lai, Pan Hu
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引用次数: 1

Abstract

Severe harmonics propagation in power systems may result in increased power losses and equipment damages. In this paper, an elliptic formula is derived to analyse the harmonic spatial distribution not only at the substations but also along the power lines or cables and to give a system-wide overview of harmonic levels. It is observed that harmonic distortion along power lines can be higher than that at the busbars and the maximum amplitude of harmonic voltage and current denoted as weak positions along power lines depends on the steady-state harmonic angle difference of voltage and current at busbars, the length of power lines, and the harmonic order. All cases are modelled in detail by analytical geometry and analysed in MATLAB. In this regard, a method to identify the weak positions in terms of maximum harmonic levels in a power system is presented, and its corresponding harmonic orders are determined. The accuracy of the model is tested using time-domain simulations in PSCAD/EMTDC.

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网状电力系统交流输电线路谐波空间传播研究
谐波在电力系统中的传播严重,会导致电力损耗增加和设备损坏。本文推导了一个椭圆公式,不仅分析了变电站的谐波空间分布,而且分析了电力线或电缆的谐波空间分布,并给出了全系统谐波水平的概述。可以看出,沿电力线的谐波畸变可能高于母线处的谐波畸变,谐波电压和电流的最大幅值表示为沿电力线薄弱位置,这取决于母线处电压和电流的稳态谐波角差、电力线的长度和谐波阶数。所有的情况都用解析几何进行了详细的建模,并在MATLAB中进行了分析。为此,提出了一种根据电力系统最大谐波电平识别薄弱位置的方法,并确定了其对应的谐波阶数。在PSCAD/EMTDC中进行时域仿真,验证了模型的准确性。
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来源期刊
Iet Circuits Devices & Systems
Iet Circuits Devices & Systems 工程技术-工程:电子与电气
CiteScore
3.80
自引率
7.70%
发文量
32
审稿时长
3 months
期刊介绍: IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers
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