P. Fazan, V. K. Mathews, N. Sandler, G. Lo, D. Kwong
{"title":"A high-C capacitor (20.4 fF/ mu m/sup 2/) with ultrathin CVD-Ta/sub 2/O/sub 5/ films deposited on rugged poly-Si for high density DRAMs","authors":"P. Fazan, V. K. Mathews, N. Sandler, G. Lo, D. Kwong","doi":"10.1109/IEDM.1992.307356","DOIUrl":null,"url":null,"abstract":"Storage capacitors integrating ultrathin chemical vapor deposited-Ta/sub 2/O/sub 5/ (10 to 15 nm thick) on rapid thermal nitrided rugged polycrystalline silicon electrodes are proposed for 256 Mb stacked dynamic random access memory applications. The unique combination of this high dielectric constant material with a rugged hemispherical grain silicon electrode allows the manufacture of the ultra high capacitance (20.4 fF/ mu m/sup 2/) stacked structures needed beyond 64 Mb.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307356","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Storage capacitors integrating ultrathin chemical vapor deposited-Ta/sub 2/O/sub 5/ (10 to 15 nm thick) on rapid thermal nitrided rugged polycrystalline silicon electrodes are proposed for 256 Mb stacked dynamic random access memory applications. The unique combination of this high dielectric constant material with a rugged hemispherical grain silicon electrode allows the manufacture of the ultra high capacitance (20.4 fF/ mu m/sup 2/) stacked structures needed beyond 64 Mb.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
