E. A. Emelyanov, M. A. Putyato, B. Semyagin, D. Feklin, V. Preobrazhenskii
{"title":"The solid solutions (AIII) PxAs1−x: Mechanism of formation the V group sublattise composition","authors":"E. A. Emelyanov, M. A. Putyato, B. Semyagin, D. Feklin, V. Preobrazhenskii","doi":"10.1109/EDM.2014.6882463","DOIUrl":null,"url":null,"abstract":"The influence of substrate temperature, density of As<sub>2</sub>, P<sub>2</sub> molecules and Ga atoms flows on solid solutions AlP<sub>x</sub>As<sub>1-x</sub>(001), GaP<sub>x</sub>As<sub>1-x</sub>(001) and InP<sub>x</sub>As<sub>1-x</sub>(001) composition at molecular-beam epitaxy (MBE) was investigated. The analysis of experimental data obtained in a wide range of growth conditions was carried out. The results of analysis are presented as a kinetic model describing the formation process of solid solution (A<sup>III</sup>)P<sub>x</sub>As<sub>1-x</sub> composition by MBE. The model can be used in the choice of growth conditions for solid solutions (A<sup>III</sup>)P<sub>x</sub>As<sub>1-x</sub>(001) layers with a set part of phosphor.","PeriodicalId":332225,"journal":{"name":"2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2014.6882463","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The influence of substrate temperature, density of As2, P2 molecules and Ga atoms flows on solid solutions AlPxAs1-x(001), GaPxAs1-x(001) and InPxAs1-x(001) composition at molecular-beam epitaxy (MBE) was investigated. The analysis of experimental data obtained in a wide range of growth conditions was carried out. The results of analysis are presented as a kinetic model describing the formation process of solid solution (AIII)PxAs1-x composition by MBE. The model can be used in the choice of growth conditions for solid solutions (AIII)PxAs1-x(001) layers with a set part of phosphor.
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